No Arabic abstract
Results of resistivity, Hall effect, magnetoresistance, susceptibility and heat capacity measurements are presented for single crystals of indium-doped tin telluride with compositions Sn$_{.988-x}$In$_x$Te where $0 leq x leq 8.4 %$, along with microstructural analysis based on transmission electron microscopy. For small indium concentrations, $x leq 0.9 %$ the material does not superconduct above 0.3 K, and the transport properties are consistent with simple metallic behavior. For $x geq 2.7 %$ the material exhibits anomalous low temperature scattering and for $x geq 6.1 %$ bulk superconductivity is observed with critical temperatures close to 2 K. Intermediate indium concentrations $2.7% leq x leq 3.8%$ do not exhibit bulk superconductivity above 0.7 K. Susceptibility data indicate the absence of magnetic impurities, while magnetoresistance data are inconsistent with localization effects, leading to the conclusion that indium-doped SnTe is a candidate charge Kondo system, similar to thallium-doped PbTe.
The ferroelectric degenerate semiconductor Sn$_{1-delta}$Te exhibits superconductivity with critical temperatures, $T_c$, of up to 0.3 K for hole densities of order 10$^{21}$ cm$^{-3}$. When doped on the tin site with greater than $x_c$ $= 1.7(3)%$ indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for $x > x_c$ than for $x < x_c$. By examining the effect of In dopant atoms on both $T_c$ and the temperature of the ferroelectric structural phase transition, $T_{SPT}$, we show that phonon modes related to this transition are not responsible for this $T_c$ enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.
The recent discovery of excellent thermoelectric properties and topological surface states in SnTe-based compounds has attracted extensive attention in various research areas. Indium doped SnTe is of particular interest because, depending on the doping level, it can either generate resonant states in the bulk valence band leading to enhanced thermoelectric properties, or induce superconductivity that coexists with topological states. Here we report on the vapor deposition of In-doped SnTe nanowires and the study of their surface oxidation and thermoelectric properties. The nanowire growth is assisted by Au catalysts, and their morphologies vary as a function of substrate position and temperature. Transmission electron microscopy characterization reveals the formation of amorphous surface in single crystalline nanowires. X-ray photoelectron spectroscopy studies suggest that the nanowire surface is composed of In2O3, SnO2, Te and TeO2 which can be readily removed by argon ion sputtering. Exposure of the cleaned nanowires to atmosphere yields rapid oxidation of the surface within only one minute. Characterizations of electrical conductivity {sigma}, thermopower S, and thermal conductivity k{appa} were performed on the same In-doped nanowire which shows suppressed {sigma} and k{appa} but enhanced S yielding an improved thermoelectric figure of merit ZT than the undoped SnTe.
Recent evidence for a charge-Kondo effect in superconducting samples of Pb$_{1-x}$Tl$_x$Te [1] has brought renewed attention to the possibility of negative U superconductivity in this material, associated with valence fluctuations on the Tl impurity sites [2]. Here, we use indium as an electron-donor to counterdope Pb$_{.99}$Tl$_{.01}$Te and study the effect of the changing chemical potential on the Kondo-like physics and on the superconducting critical temperature, $T_c$. We find that, as the chemical potential moves away from the value where superconductivity, Kondo-like physics, and chemical potential pinning are expected, both $T_c$ and the low-temperature resistance anomaly are suppressed. This provides further evidence that both the superconductivity and the Kondo-like behavior are induced by the same source, as anticipated in the negative U model.
We have studied Ni-substitution effect in LaFe$_{1-x}$Ni$_{x}$AsO ($0leq x leq0.1$) by the measurements of x-ray diffraction, electrical resistivity, magnetic susceptibility, and heat capacity. The nickel doping drastically suppresses the resistivity anomaly associated with spin-density-wave ordering in the parent compound. Superconductivity emerges in a narrow region of $0.03leq x leq0.06$ with the maximum $T_c$ of 6.5 K at $x$=0.04, where enhanced magnetic susceptibility shows up. The upper critical field at zero temperature is estimated to exceed the Pauli paramagnetic limit. The much lowered $T_c$ in comparison with LaFeAsO$_{1-x}$F$_{x}$ system is discussed.
Because the cuprate superconductors are doped Mott insulators, it would be advantageous to solve even a toy model that exhibits both Mottness and superconductivity. We consider the Hatsugai-Kohmoto model, an exactly solvable system that is a prototypical Mott insulator above a critical interaction strength at half filling. Upon doping or reducing the interaction strength, our exact calculations show that the system becomes a non-Fermi liquid metal with a superconducting instability. In the presence of a weak pairing interaction, the instability produces a thermal transition to a superconducting phase, which is distinct from the BCS state, as evidenced by a gap-to-transition temperature ratio exceeding the universal BCS limit. The elementary excitations of this superconductor are not Bogoliubov quasiparticles but rather superpositions of doublons and holons, composite excitations signaling that the superconducting ground state of the doped Mott insulator inherits the non-Fermi liquid character of the normal state. An unexpected feature of this model is that it exhibits a superconductivity-induced transfer of spectral weight from high to low energies as seen in the cuprates as well as a suppression of the superfluid density relative to that in BCS theory.