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Atomically thin transitional metal ditellurides like WTe2 and MoTe2 have triggered tremendous research interests because of their intrinsic nontrivial band structure. They are also predicted to be 2D topological insulators and type-II Weyl semimetals. However, most of the studies on ditelluride atomic layers so far rely on the low-yield and time-consuming mechanical exfoliation method. Direct synthesis of large-scale monolayer ditellurides has not yet been achieved. Here, using the chemical vapor deposition (CVD) method, we demonstrate controlled synthesis of high-quality and atom-thin tellurides with lateral size over 300 {mu}m. We found that the as-grown WTe2 maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscope (STEM). The low-temperature transport measurements revealed a novel semimetal-to-insulator transition in WTe2 layers and an enhanced superconductivity in few-layer MoTe2. This work paves the way to the synthesis of atom-thin tellurides and also quantum spin Hall devices.
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We investigate the fine structure of graphene on iridium, which is a model for graphene weakly interacting with a transition metal substrate. Even the highest quality epitaxial graphene displays tiny imperfections, i.e. small biaxial strains, ca. 0.3%, rotations, ca. 0.5^{circ}, and shears over distances of ca. 100 nm, and is found incommensurate, as revealed by X-ray diffraction and scanning tunneling microscopy. These structural variations are mostly induced by the increase of the lattice parameter mismatch when cooling down the sample from the graphene preparation temperature to the measurement temperature. Although graphene weakly interacts with iridium, its thermal expansion is found positive, contrary to free-standing graphene. The structure of graphene and its variations are very sensitive to the preparation conditions. All these effects are consistent with initial growth and subsequent pining of graphene at steps.
We report a combined theoretical and experimental study on TaIrTe4, a potential candidate of the minimal model of type-II Weyl semimetals. Unexpectedly, an intriguing node structure with twelve Weyl points and a pair of nodal lines protected by mirror symmetry was found by first-principle calculations, with its complex signatures such as the topologically non-trivial band crossings and topologically trivial Fermi arcs cross-validated by angle-resolved photoemission spectroscopy. Through external strain, the number of Weyl points can be reduced to the theoretical minimum of four, and the appearance of the nodal lines can be switched between different mirror planes in momentum space. The coexistence of tunable Weyl points and nodal lines establishes ternary transition-metal tellurides as a unique test ground for topological state characterization and engineering.
Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire high-quality single crystals in a facile and efficient manner. As one of the most widely employed method of single-crystal growth, conventional chemical vapor transport (CVT) generally encountered problems including the excess nucleation that leads to small crystal clusters and slow growth rate. To address these issues, a seed crystal is introduced to suppress the nucleation and an inner tube is adopted as both a separator and a flow restrictor, favoring the growth of large-size and high-quality TMD single crystals successfully. Three examples are presented, the effective growth of millimeter-sized MoSe2 and MoTe2 single crystals, and the greatly shortened growth period for PtSe2 single crystal, all of which are synthesized in high quality according to detailed characterizations. The mechanism of seeded CVT is discussed. Furthermore, a phototransistor based on exfoliated multi-layered MoSe2 displays excellent photoresponse in ambient conditions, and considerably rapid rise and fall time of 110 and 125 us are obtained. This work paves the way for developing a facile and versatile method to synthesize high-quality TMD single crystals in laboratory, which could serve as favorable functional materials for potential low-dimensional optoelectronics.
Carrying information using generation and detection of the orbital current, instead of the spin current, is an emerging field of research, where the orbital Hall effect (OHE) is an important ingredient. Here, we propose a new mechanism of the OHE that occurs in {it non-}centrosymmetric materials. We show that the broken inversion symmetry in the 2D transition metal dichalcogenides (TMDCs) causes a robust orbital moment, which flow in different directions due to the opposite Berry curvatures under an applied electric field, leading to a large OHE. This is in complete contrast to the inversion-symmetric systems, where the orbital moment is induced only by the external electric field. We show that the valley-orbital locking as well as the OHE both appear even in the absence of the spin-orbit coupling. The non-zero spin-orbit coupling leads to the well-known valley-spin locking and the spin Hall effect, which we find to be weak, making the TMDCs particularly suitable for direct observation of the OHE, with potential application in {it orbitronics}.
We report resonant ultrasound spectroscopy (RUS), dilatometry/magnetostriction, magnetotransport, magnetization, specific heat, and $^{119}$Sn Mossbauer spectroscopy measurements on SnTe and Sn$_{0.995}$Cr$_{0.005}$Te. Hall measurements at $T=77$ K indicate that our Bridgman-grown single crystals have a $p$-type carrier concentration of $3.4 times 10^{19}$ cm$^{-3}$ and that our Cr-doped crystals have an $n$-type concentration of $5.8 times 10^{22}$ cm$^{-3}$. Although our SnTe crystals are diamagnetic over the temperature range $2, text{K} leq T leq 1100, text{K}$, the Cr-doped crystals are room temperature ferromagnets with a Curie temperature of 294 K. For each sample type, three-terminal capacitive dilatometry measurements detect a subtle 0.5 micron distortion at $T_c approx 85$ K. Whereas our RUS measurements on SnTe show elastic hardening near the structural transition, pointing to co-elastic behavior, similar measurements on Sn$_{0.995}$Cr$_{0.005}$Te show a pronounced softening, pointing to ferroelastic behavior. Effective Debye temperature, $theta_D$, values of SnTe obtained from $^{119}$Sn Mossbauer studies show a hardening of phonons in the range 60--115K ($theta_D$ = 162K) as compared with the 100--300K range ($theta_D$ = 150K). In addition, a precursor softening extending over approximately 100 K anticipates this collapse at the critical temperature, and quantitative analysis over three decades of its reduced modulus finds $Delta C_{44}/C_{44}=A|(T-T_0)/T_0|^{-kappa}$ with $kappa = 0.50 pm 0.02 $, a value indicating a three-dimensional softening of phonon branches at a temperature $T_0 sim 75$ K, considerably below $T_c$. We suggest that the differences in these two types of elastic behaviors lie in the absence of elastic domain wall motion in the one case and their nucleation in the other.
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