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Register a new userStrong impact of grain boundaries on the thermoelectric properties of non-equilibrium synthesized p-type Ce1.05Fe4Sb12.04 filled skutterudites with nanostructure
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p-type Ce1.05Fe4Sb12.04 filled skutterudites with much improved thermoelectric properties have been synthesized by rapidly converting nearly amorphous ribbons into crystalline pellets under pressure. It is found that this process greatly suppresses grain growth and second phase formation/segregation, and hence results in the samples consisting of nano-sized grains with strongly-coupled grain boundaries, as observed by transmission electron microscopy. The room temperature carrier mobility in these samples is significantly higher (nearly double) than those in the samples of the same starting composition made by the conventional solid-state reaction. Nanostructure reduces the lattice thermal conductivity, while cleaner grain boundaries permit higher electron conduction.
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We studied nanoprecipitates and defects in p-type filled skutterudite CeFe4Sb12 prepared by non-equilibrium melt-spinning plus spark plasma sintering method using transmission electron microscopy. Nanoprecipitates with mostly spherical shapes and different sizes (from several nm to several tens of nm) have been observed. The most typically observed nanoprecipitates are shown to be Sb-rich. Superlattices with a periodicity of about 3.576 nm were induced by the ordering of excessive Sb atoms along the c direction. These nanoprecipitates usually share coherent interfaces with the surrounding matrix and induce anisotropic and strong strain fields in the surrounding matrix. Nanoprecipitates with compositions close to CeSb2 are much larger in size (~ 30 nm) and have orthorhombic structures. Various defects were typically observed on the interfaces between these nanoprecipitates and the matrix. The strain fields induced by these nanoprecipitates are less distinct, possibly because part of the strains has been released by the formation of defects.
We propose new topological insulators in cerium filled skutterudite (FS) compounds based on ab initio calculations. We find that two compounds CeOs4As12 and CeOs4Sb12 are zero gap materials with band inversion between Os-d and Ce-f orbitals, which are thus parent compounds of two and three-dimensional topological insulators just like bulk HgTe. At low temperature, both compounds become topological Kondo insulators, which are Kondo insulators in the bulk, but have robust Dirac surface states on the boundary. This new family of topological insulators has two advantages compared to previous ones. First, they can have good proximity effect with other superconducting FS compounds to realize Majarona fermions. Second, the antiferromagnetism of CeOs4Sb12 at low temperature provides a way to realize the massive Dirac fermion with novel topological phenomena.
We present an investigation of the thermoelectric properties of cubic perovskite SrTiO3. The results are derived from a combination of calculated transport functions obtained from Boltzmann transport theory in the constant scattering time approximation based on the electronic structure and existing experimental data for La-doped SrTiO3. The figure of merit ZT is modeled with respect to carrier concentration and temperature. The model predicts a relatively high $ZT$ at optimized doping, and suggests that the $ZT$ value can reach 0.7 at T = 1400 K. Thus $ZT$ can be improved from the current experimental values by carrier concentration optimization.
The electronic Seebeck response in a conductor involves the energy-dependent mean free path of the charge carriers and is affected by crystal structure, scattering from boundaries and defects, and strain. Previous photothermoelectric (PTE) studies have suggested that the thermoelectric properties of polycrystalline metal nanowires are related to grain structure, though direct evidence linking crystal microstructure to the PTE response is difficult to elucidate. Here, we show that room temperature scanning PTE measurements are sensitive probes that can detect subtle changes in the local Seebeck coefficient of gold tied to the underlying defects and strain that mediate crystal deformation. This connection is revealed through a combination of scanning PTE and electron microscopy measurements of single crystal and bicrystal gold microscale devices. Unexpectedly, the photovoltage maps strongly correlate with gradually varying crystallographic misorientations detected by electron backscatter diffraction. The effects of individual grain boundaries and differing grain orientations on the PTE signal are minimal. This scanning PTE technique shows promise for identifying minor structural distortions in nanoscale materials and devices.
Science-driven design of future thermoelectric materials requires a deep understanding of the fundamental relationships between microstructure and transport properties. Grain boundaries in polycrystalline materials influence the thermoelectric performance through the scattering of phonons or the trapping of electrons due to space-charge effects. Yet, the current lack of careful investigations on grain boundary-associated features hinders further optimization of properties. Here, we study n-type NbCo1-xPtxSn half-Heusler alloys, which were synthesized by ball milling and spark plasma sintering (SPS). Post-SPS annealing was performed on one sample, leading to improved low-temperature electrical conductivity. The microstructure of both samples was examined by electron microscopy and atom probe tomography. The grain size increases from ~230 nm to ~2.38 {mu}m upon annealing. Pt is found within grains and at grain boundaries, where it locally reduces the resistivity, as assessed by in situ four-point-probe electrical conductivity measurement. Our work showcases the correlation between microstructure and electrical conductivity, providing opportunities for future microstructural optimization by tuning the chemical composition at grain boundaries.
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