Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDamping in high-frequency metallic nanomechanical resonators
158
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We have studied damping in polycrystalline Al nanomechanical resonators by measuring the temperature dependence of their resonance frequency and quality factor over a temperature range of 0.1 - 4 K. Two regimes are clearly distinguished with a crossover temperature of 1 K. Below 1 K we observe a logarithmic temperature dependence of the frequency and linear dependence of damping that cannot be explained by the existing standard models. We attribute these phenomena to the effect of the two-level systems characterized by the unexpectedly long (at least two orders of magnitude longer) relaxation times and discuss possible microscopic models for such systems. We conclude that the dynamics of the two-level systems is dominated by their interaction with one-dimensional phonon modes of the resonators.
rate research
Read More
The energy dissipation 1/Q (where Q is the quality factor) and resonance frequency characteristics of single-crystal 3C-SiC ultrahigh frequency (UHF) nanomechanical resonators are measured, for a family of UHF resonators with resonance frequencies of 295MHz, 395MHz, 411MHz, 420MHz, 428MHz, and 482MHz. A temperature dependence of dissipation, 1/Q ~ T^(0.3) has been identified in these 3C-SiC devices. Possible mechanisms that contribute to dissipation in typical doubly-clamped beam UHF resonators are analyzed. Device size and dimensional effects on the dissipation are also examined. Clamping losses are found to be particularly important in these UHF resonators. The resonance frequency decreases as the temperature is increased, and the average frequency temperature coefficient is about -45ppm/K.
We investigate the influence of gold thin-films subsequently deposited on a set of initially bare, doubly clamped, high-stress silicon nitride string resonators at room temperature. Analytical expressions for resonance frequency, quality factor and damping for both in- and out-of-plane flexural modes of the bilayer system are derived, which allows for the determination of effective elastic parameters of the composite structure from our experimental data. We find the inverse quality factor to scale linearly with the gold film thickness, indicating that the overall damping is governed by losses in the metal. Correspondingly, the mechanical linewidth increases by more than one order of magnitude compared to the bare silicon nitride string resonator. Furthermore, we extract mechanical quality factors of the gold film for both flexural modes and show that they can be enhanced by complete deposition of the metal in a single step, suggesting that surface and interface losses play a vital role in metal thin-films.
In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, dissipation dilution, is employed in mirror suspensions of gravitational wave interferometers and at the nanoscale, where soft-clamping and strain engineering have allowed extremely high quality factors. However, these techniques have so far only been applied in amorphous materials, specifically silicon nitride. Crystalline materials exhibit significantly lower intrinsic damping at cryogenic temperatures, due to the absence of two level systems in the bulk, as exploited in Weber bars and silicon optomechanical cavities. Applying dissipation dilution engineering to strained crystalline materials could therefore enable extremely low loss nanomechanical resonators, due to the combination of reduced internal friction, high intrinsic strain, and high yield strength. Pioneering work has not yet fully exploited this potential. Here, we demonstrate that single crystal strained silicon, a material developed for high mobility transistors, can be used to realize mechanical resonators with ultralow dissipation. We observe that high aspect ratio ($>10^5$) strained silicon nanostrings support MHz mechanical modes with quality factors exceeding $10^{10}$ at 7 K, a tenfold improvement over values reported in silicon nitride. At 7 K, the thermal noise-limited force sensitivity is approximately $45 mathrm{{zN}/{sqrt{Hz}}}$ - approaching that of carbon nanotubes - and the heating rate is only 60 quanta-per-second. Our nanomechanical resonators exhibit lower dissipation than the most pristine macroscopic oscillators and their low mass makes them particularly promising for quantum sensing and transduction.
The measurement of micron-sized mechanical resonators by electrical techniques is difficult, because of the combination of a high frequency and a small mechanical displacement which together suppress the electromechanical coupling. The only electromagnetic technique proven up to the range of several hundred MHz requires the usage of heavy magnetic fields and cryogenic conditions. Here we show how, without the need of either of them, to fully electrically detect the vibrations of conductive nanomechanical resonators up to the microwave regime. We use the electrically actuated vibrations to modulate an LC tank circuit which blocks the stray capacitance, and detect the created sideband voltage by a microwave analyzer. We show the novel technique up to mechanical frequencies of 200 MHz. Finally, we estimate how one could approach the quantum limit of mechanical systems.
We report on a first principles study of anti-ferromagnetic resonance (AFMR) phenomena in metallic systems [MnX (X=Ir,Pt,Pd,Rh) and FeRh] under an external electric field. We demonstrate that the AFMR linewidth can be separated into a relativistic component originating from the angular momentum transfer between the collinear AFM subsystem and the crystal through the spin orbit coupling (SOC), and an exchange component that originates from the spin exchange between the two sublattices. The calculations reveal that the latter component becomes significant in the low temperature regime. Furthermore, we present results for the current-induced intersublattice torque which can be separated into the Field-Like (FL) and Damping-Like (DL) components, affecting the intersublattice exchange coupling and AFMR linewidth, respectively.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
