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Register a new userObservation of a stronger-than-adiabatic change of light trapped in an ultrafast switched GaAs-AlAs microcavity
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We study the time-resolved reflectivity spectrum of a switched planar GaAs-AlAs microcavity. Between 5 and 40 ps after the switching (pump) pulse we observe a strong excess probe reflectivity and a change of the frequency of light trapped in the cavity up to 5 linewidths away from the cavity resonance. This frequency change does not adiabatically follow the fast-changing cavity resonance. The frequency change is attributed to an accumulated phase change due to the time-dependent refractive index. An analytical model predicts dynamics in qualitative agreement with the experiments, and points to crucial parameters that control future applications.
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The ultrafast response of a high-reflectivity GaAs/AlAs Bragg mirror to optical pumping is investigated for all-optical switching applications. Both Kerr and free carrier nonlinearities are induced with 100 fs, 780 nm pulses with a fluence of 0.64 kJ/m^2 and 0.8 kJ/m^2. The absolute transmission of the mirror at 931 nm increases by a factor of 27 from 0.0024% to 0.065% on a picosecond timescale. These results demonstrate the potential for a high-reflectivity ultrafast switchable mirror for quantum optics and optical communication applications. A design is proposed for a structure to be pumped below the bandgaps of the semiconductor mirror materials. Theoretical calculations on this structure show switching ratios up to 2200 corresponding to switching from 0.017% to 37.4% transmission.
Condensation of bosons into a macroscopic quantum state belongs to the most intriguing phenomena in nature. It was first realized in quantum gases of ultra-cold atoms, but more recently became accessible in open-dissipative, exciton-based solid-state systems at elevated temperatures. Semiconducting monolayer crystals have emerged as a new platform for studies of strongly bound excitons in ultimately thin materials. Here, we demonstrate the formation of a bosonic condensate driven by excitons hosted in an atomically thin layer of MoSe2, strongly coupled to light in a solid-state resonator. The structure is operated in the regime of collective strong coupling, giving rise to hybrid exciton-polariton modes composed of a Tamm-plasmon resonance, GaAs quantum well excitons and two-dimensional excitons confined in a monolayer of MoSe2. Polariton condensation in a monolayer crystal manifests by a superlinear increase of emission intensity from the hybrid polariton mode at injection powers as low as 4.8 pJ/pulse, as well as its density-dependent blueshift and a dramatic collapse of the emission linewidth as a hallmark of temporal coherence. Importantly, we observe a significant spin-polarization in the injected polariton condensate, a fingerprint of the core property of monolayer excitons subject to spin-valley locking. The observed effects clearly underpin the perspective of building novel highly non-linear valleytronic devices based on light-matter fluids, coherent bosonic light sources based on atomically thin materials, and paves the way towards studying materials with unconventional topological properties in the framework of bosonic condensation.
Photon thermalisation and condensation in dye-filled microcavities is a growing area of scientific interest, at the intersection of photonics, quantum optics and statistical physics. We give here a short introduction to the topic, together with an explanation of some of our more important recent results. A key result across several projects is that we have a model based on a detailed physical description which has been used to accurately describe experimental observations. We present a new open-source package in Python called PyPBEC which implements this model. The aim is to enable the reader to readily simulate and explore the physics of photon condensates themselves, so this article also includes a working example code which can be downloaded from the GitHub repository.
Recently reported optical nuclear orientation in the $n$-doped GaAs microcavity under pumping in nominal transparency region of the crystal [Appl. Phys. Lett. $mathbf{106}$, 242405 (2015)] has arisen a number of questions, the main of them concerning mechanisms of angular momentum transfer from the light to the nuclear spin system and the nature of the light-related magnetic fields accompanying the optical nuclear polarization. In this paper, we use the spin noise spectroscopy for magnetometric purposes, particularly, to study effective fields acting upon electron spin system of an $n$-GaAs layer inside a high-Q microcavity in the presence of elliptically polarized probe beam. In addition to the external magnetic field applied to the sample in the Voigt geometry and the Overhauser field created by optically oriented nuclei, the spin noise spectrum reveals an additional effective, optical, magnetic field produced by elliptically polarized probe itself. This field is directed along the light propagation axis, with its sign being determined by the sign of the probe helicity and its magnitude depending on degree of circular polarization and intensity of the probe beam. We analyze properties of this optical magnetic field and suggest that it results from the optical Stark effect in the field of the elliptically polarized electromagnetic wave.
Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, non-linearities and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation and deformation potential interaction are the strongest mechanism of light-to-sound transduction in semiconductor GaAs/AlAs distributed Bragg reflector optomechanical resonators. We demonstrate that the ultrafast spatial redistribution of the photoexcited carriers in microcavities with massive GaAs spacers leads to an enhanced coupling to the fundamental 20 GHz vertically polarized mechanical breathing mode. The carrier diffusion along the growth axis of the device can be enhanced by increasing the laser power, or limited by embedding GaAs quantum wells in the cavity spacer, a strategy used here to prove and engineer the optoelectronic forces in phonon generation with real carriers. The wavelength dependence of the observed phenomena provide further proof of the role of optoelectronic forces. The optical forces associated to the different intervening mechanisms and their relevance for dynamical backaction in optomechanics are evaluated using finite-element methods. The results presented open the path to the study of hitherto seldom investigated dynamical backaction in optomechanical solid-state resonators in the presence of optoelectronic forces.
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