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Register a new userUltrafast Optical Response of a High-Reflectivity GaAs/AlAs Bragg Mirror
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The ultrafast response of a high-reflectivity GaAs/AlAs Bragg mirror to optical pumping is investigated for all-optical switching applications. Both Kerr and free carrier nonlinearities are induced with 100 fs, 780 nm pulses with a fluence of 0.64 kJ/m^2 and 0.8 kJ/m^2. The absolute transmission of the mirror at 931 nm increases by a factor of 27 from 0.0024% to 0.065% on a picosecond timescale. These results demonstrate the potential for a high-reflectivity ultrafast switchable mirror for quantum optics and optical communication applications. A design is proposed for a structure to be pumped below the bandgaps of the semiconductor mirror materials. Theoretical calculations on this structure show switching ratios up to 2200 corresponding to switching from 0.017% to 37.4% transmission.
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We report on the fabrication and characterization of a micromechanical oscillator consisting only of a free-standing dielectric Bragg mirror with high optical reflectivity and high mechanical quality. The fabrication technique is a hybrid approach involving laser ablation and dry etching. The mirror has a reflectivity of 99.6%, a mass of 400ng, and a mechanical quality factor Q of approximately 10^4. Using this micromirror in a Fabry Perot cavity, a finesse of 500 has been achieved. This is an important step towards designing tunable high-Q high-finesse cavities on chip.
A novel approach has been developed to calculate the temperature dependence of the optical response of a semiconductor. The dielectric function is averaged over several thermally perturbed configurations that are extracted from molecular dynamic simulations. The calculated temperature dependence of the imaginary part of the dielectric function of GaAs is presented in the range from 0 to 700 K. This approach that explicitly takes into account lattice vibrations describes well the observed thermally-induced energy shifts and broadening of the dielectric function.
We study the time-resolved reflectivity spectrum of a switched planar GaAs-AlAs microcavity. Between 5 and 40 ps after the switching (pump) pulse we observe a strong excess probe reflectivity and a change of the frequency of light trapped in the cavity up to 5 linewidths away from the cavity resonance. This frequency change does not adiabatically follow the fast-changing cavity resonance. The frequency change is attributed to an accumulated phase change due to the time-dependent refractive index. An analytical model predicts dynamics in qualitative agreement with the experiments, and points to crucial parameters that control future applications.
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We investigate the hot carrier dynamics of ZrTe$_5$ by ultrafast time-resolved optical reflectivity. Our results reveal a phonon-mediated across-gap recombination, consistent with its temperature-dependent gap nature as observed previously by photoemission. In addition, two distinct relaxations with a kink feature right after initial photoexcitation are well resolved, suggesting the complexity of electron thermalization process. Our findings indicate that correlated many-body effects play important role for the transient dynamics of ZrTe$_5$.
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