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Register a new userLarge Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator
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The in-plane and out-of-plane magnetoresistance (MR) of single crystals of La_2CuO_4, lightly doped (x=0.03) with either Sr (La_{2-x}Sr_xCuO_4) or Li (La_2Cu_{1-x}Li_xO_4), have been measured in the fields applied parallel and perpendicular to the CuO_2 planes. Both La_{1.97}Sr_{0.03}CuO_4 and La_2Cu_{0.97}Li_{0.03}O_4 exhibit the emergence of a positive MR at temperatures (T) well below the spin glass (SG) transition temperature T_{sg}, where charge dynamics is also glassy. This positive MR grows as T->0 and shows hysteresis and memory. In this regime, the in-plane resistance R_{ab}(T,B) is described by a scaling function, suggesting that short-range Coulomb repulsion between two holes in the same disorder-localized state plays a key role at low T. The results highlight similarities between this magnetic material and a broad class of well-studied, nonmagnetic disordered insulators.
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We study long wavelength magnetic excitations in lightly doped La_{2-x}Sr_{x}CuO_{4} (x < 0.03) detwinned crystals. The lowest energy magnetic anisotropy induced gap can be understood in terms of the antisymmetric spin interaction inside the antiferromagnetic (AF) phase. The second magnetic resonace, analyzed in terms of in-plane spin anisotropy, shows unconventional behavior within the AF state and led to the discovery of collective spin excitations pertaining to a field induced magnetically ordered state. This state persists in a 9 T field to more than 100 K above the N{e}el temperature in x = 0.01.
A c-axis magnetotransport and resistance noise study in La_{1.97}Sr_{0.03}CuO_{4} reveals clear signatures of glassiness, such as hysteresis, memory, and slow, correlated dynamics, but only at temperatures (T) well below the spin glass transition temperature T_{sg}. The results strongly suggest the emergence of charge glassiness, or dynamic charge ordering, as a result of Coulomb interactions.
We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperatures, resulting in a spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T$_c$ cuprates. Disorder and impurities only play a minor and assistant role here.
Resistivity and magnetization measurements are used for studying the transverse sliding of AF domain boundaries in lightly doped La_{2-x}Sr_{x}CuO_{4}. We discuss that it is the freezing of the transverse boundary motion that is responsible for the appearance of ``spin-glass features at low temperatures.
It is widely believed that high-temperature superconductivity in the cuprates emerges from doped Mott insulators. The physics of the parent state seems deceivingly simple: The hopping of the electrons from site to site is prohibited because their on-site Coulomb repulsion U is larger than the kinetic energy gain t. When doping these materials by inserting a small percentage of extra carriers, the electrons become mobile but the strong correlations from the Mott state are thought to survive; inhomogeneous electronic order, a mysterious pseudogap and, eventually, superconductivity appear. How the insertion of dopant atoms drives this evolution is not known, nor whether these phenomena are mere distractions specific to hole-doped cuprates or represent the genuine physics of doped Mott insulators. Here, we visualize the evolution of the electronic states of (Sr1-xLax)2IrO4, which is an effective spin-1/2 Mott insulator like the cuprates, but is chemically radically different. Using spectroscopic-imaging STM, we find that for doping concentration of x=5%, an inhomogeneous, phase separated state emerges, with the nucleation of pseudogap puddles around clusters of dopant atoms. Within these puddles, we observe the same glassy electronic order that is so iconic for the underdoped cuprates. Further, we illuminate the genesis of this state using the unique possibility to localize dopant atoms on topographs in these samples. At low doping, we find evidence for much deeper trapping of carriers compared to the cuprates. This leads to fully gapped spectra with the chemical potential at mid-gap, which abruptly collapse at a threshold of around 4%. Our results clarify the melting of the Mott state, and establish phase separation and electronic order as generic features of doped Mott insulators.
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