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Register a new userAnomalous thermoelectric transport of Dirac particles in graphene
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We report a thermoelectric study of graphene in both zero and applied magnetic fields. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1 /, where n2D is the carrier density. We observe a very large Nernst signal Sxy (~ 50 uV/K at 8 T) at the Dirac point, and an oscillatory dependence of both Sxx and Sxy on n2D at low temperatures. Our results underscore the anomalous thermoelectric transport in graphene, which may be used as a highly sensitive probe for impurity bands near the Dirac point.
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We study the electronic contribution to the main thermoelectric properties of a molecular junction consisting of a single quantum dot coupled to graphene external leads. The system electrical conductivity (G), Seebeck coefficient ($S$), and the thermal conductivity ($kappa$), are numerically calculated based on a Greens function formalism that includes contributions up to the Hartree-Fock level. We consider the system leads to be made either of pure or gapped-graphene. To describe the free electrons in the gapped-graphene electrodes we used two possible scenarios, the massive gap scenario, and the massless gap scenario, respectively. In all cases, the Fano effect is responsible for a strong violation of the Wiedemann-Franz law and we found a substantial increase of the system figure of merit $ZT$ due to a drastic reduction of the system thermal coefficient. In the case of gapped-graphene electrodes, the system figure of merit presents a maximum at an optimal value of the energy gap of the order of $Delta/Dsim$ 0.002 (massive gap scenario) and $Delta/Dsim$ 0.0026 (massless gap scenario). Additionally, for all cases, the system figure of merit is temperature dependent.
We have investigated a new feature of impurity cyclotron resonances common to various localized potentials of graphene. A localized potential can interact with a magnetic field in an unexpected way in graphene. It can lead to formation of anomalous boundstates that have a sharp peak with a width $R$ in the probability density inside the potential and a broad peak of size magnetic length $ell$ outside the potential. We investigate optical matrix elements of anomalous states, and find that they are unusually small and depend sensitively on magnetic field. The effect of many-body interactions on their optical conductivity is investigated using a self-consistent time-dependent Hartree-Fock approach (TDHFA). For a completely filled Landau level we find that an excited electron-hole pair, originating from the optical transition between two anomalous impurity states, is nearly uncorrelated with other electron-hole pairs, although it displays a substantial exchange self-energy effects. This absence of correlation is a consequence of a small vertex correction in comparison to the difference between renormalized transition energies computed within the one electron-hole pair approximation. However, an excited electron-hole pair originating from the optical transition between a normal and an anomalous impurity states can be substantially correlated with other electron-hole states with a significant optical strength.
In a series of recent papers anomalous Hall and Nernst effects have been theoretically discussed in the non-linear regime and have seen some early success in experiments. In this paper, by utilizing the role of Berry curvature dipole, we derive the fundamental mathematical relations between the anomalous electric and thermoelectric transport coefficients in the non-linear regime. The formulae we derive replace the celebrated Wiedemann-Franz law and Mott relation of anomalous thermoelectric transport coefficients defined in the linear response regime. In addition to fundamental and testable new formulae, an important byproduct of this work is the prediction of nonlinear anomalous thermal Hall effect which can be observed in experiments.
Charge transport at the Dirac point in bilayer graphene exhibits two dramatically different transport states, insulating and metallic, that occur in apparently otherwise indistinguishable experimental samples. We demonstrate that the existence of these two transport states has its origin in an interplay between evanescent modes, that dominate charge transport near the Dirac point, and disordered configurations of extended defects in the form of partial dislocations. In a large ensemble of bilayer systems with randomly positioned partial dislocations, the conductivity distribution $P(sigma)$ is found to be strongly peaked at both the insulating and metallic limits. We argue that this distribution form, that occurs only at the Dirac point, lies at the heart of the observation of both metallic and insulating states in bilayer graphene.
There exist experiments indicating that at certain conditions, such as an appropriate substrate, a gap of the order of 10 meV can be opened at the Dirac points of a quasiparticle spectrum of graphene. We demonstrate that the opening of such a gap can result in the appearance of a fingerprint bump of the Seebeck signal when the chemical potential approaches the gap edge. The magnitude of the bump can be up to one order higher than the already large value of the thermopower occurring in graphene. Such a giant effect, accompanied by the nonmonotonous dependence on the chemical potential, is related to the emergence of a new channel of quasiparticle scattering from impurities with the relaxation time strongly dependent on the energy. We analyze the behavior of conductivity and thermopower in such a system, accounting for quasiparticle scattering from impurities with the model potential in a self-consistent scheme. Reproducing the existing results for the case of gapless graphene, we demonstrate a failure of the simple Mott formula in the case under consideration.
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