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Single crystals of BaRh_2As_2 have been synthesized from a Pb flux. We present the room temperature crystal structure, single crystal x-ray diffraction measurements as a function of temperature T, anisotropic magnetic susceptibility chi versus T, electrical resistivity in the ab-plane rho versus T, Hall coefficient versus T and magnetic field H, and heat capacity C versus T measurements on the crystals. The single crystal structure determination confirms that BaRh_2As_2 forms in the tetragonal ThCr_2Si_2 type structure (space group I4/mmm) with lattice parameters a = b = 4.0564(6)AA and c = 12.797(4) AA. Band structure calculations show that BaRh_2As_2 should be metallic with a small density of states at the Fermi energy N(E_ F) = 3.49 states/eV f.u. (where f.u. equiv formula unit) for both spin directions. rho(T) data in the ab-plane confirm that the material is indeed metallic with a residual resistivity rho(2K) = 29 mu Omega cm, and with a residual resistivity ratio rho(310K)/rho(2K) = 5.3. The observed chi(T) is small (sim 10^{-5} cm^3/mol) and weakly anisotropic with chi_{ab}/chi_ c approx 2. The C(T) data indicate a small density of states at the Fermi energy with the low temperature Sommerfeld coefficient gamma = 4.7(9) mJ/mol K^2. There are no indications of superconductivity, spin density wave, or structural transitions between 2K and 300K. We compare the calculated density of states versus energy of BaRh_2As_2 with that of BaFe_2As_2.
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We report on the synthesis and physical properties of cm-sized CoGeO$_3$ single crystals grown in a high pressure mirror furnace at pressures of 80~bar. Direction dependent magnetic susceptibility measurements on our single crystals reveal highly anisotropic magnetic properties that we attribute to the impact of strong single ion anisotropy appearing in this system with T$_N$~$sim$~33.5~K. Furthermore, we observe effective magnetic moments that are exceeding the spin only values of the Co ions which reveals the presence of sizable orbital moments in CoGeO$_3$.
A series of high quality NaFe$_{1-x}$Cu$_x$As single crystals has been grown by a self-flux technique, which were systematically characterized via structural, transport, thermodynamic, and high pressure measurements. Both the structural and magnetic transitions are suppressed by Cu doping, and bulk superconductivity is induced by Cu doping. Superconducting transition temperature ($T_c$) is initially enhanced from 9.6 to 11.5 K by Cu doping, and then suppressed with further doping. A phase diagram similar to NaFe$_{1-x}$Co$_x$As is obtained except that insulating instead of metallic behavior is observed in extremely overdoped samples. $T_c$s of underdoped, optimally doped, and overdoped samples are all notably enhanced by applying pressure. Although a universal maximum transition temperature ($T_c^{max}$) of about 31 K under external pressure is observed in underdoped and optimally doped NaFe$_{1-x}$Co$_x$As, $T_c^{max}$ of NaFe$_{1-x}$Cu$_x$As is monotonously suppressed by Cu doping, suggesting that impurity potential of Cu is stronger than Co in NaFeAs. The comparison between Cu and Co doping effect in NaFeAs indicates that Cu serves as an effective electron dopant with strong impurity potential, but part of the doped electrons are localized and do not fill the energy bands as predicted by the rigid-band model.
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In this letter, we report growth and characterization of bulk Bi2Se3 single crystals. The studied Bi2Se3 crystals are grown by self flux method through solid state reaction from high temperature (950C) melt of constituent elements and slow cooling (2C/hour). The resultant crystals are shiny and grown in [00l] direction, as evidenced from surface XRD. Detailed Reitveld analysis of PXRD (powder x-ray diffraction) of the crystals showed that these are crystallized in rhombohedral crystal structure with space group of R3m (D5) and the lattice parameters are a = 4.14(2)A, b = 4.14 (2) A and c = 28.7010(7) A. Temperature versus resistivity (R-T) plots revealed metallic conduction down to 2K, with typical room temperature resistivity (R300K) of around 0.53 mohm-cm and residual resistivity of 0.12 mohm-cm. Resistivity under magnetic field ] measurements exhibited large +Ve magneto resistance right from 2K to 200K. Isothermal magneto resistance [RH] measurements at 2K, 100K and 200K exhibited magneto resistance (MR) of up to 240, 130 and 60 percent respectively at 14 Tesla. Further the MR plots are non saturating and linear with field at all temperature. At 2K the MR plots showed clear quantum oscillations at above say 10 Tesla applied field. Also the Kohler plots i.e., were seen consolidating on one plot. Interestingly, the studied Bi2Se3 single crystal exhibited the Shubnikov-de Haas oscillations (SdH) at 2K under different applied magnetic fields ranging from 4Tesla to 14 Tesla
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