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Register a new userIon beam induced enhanced diffusion from gold thin films in silicon
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J. Ghatak
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Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by irradiation with 1.5 MeV Au2+ at a flux of 6.3x10^12 ions cm-2 s-1 and fluence up to 1x10^15 ions cm-2. The high resolution transmission electron microscopy measurements showed the presence of gold silicide formation for the above-mentioned systems at fluence greater than equal to 1x1014 ions cm-2. The maximum depth to which the gold atoms have been diffused at a fluence of 1x10^14 ions cm-2 for the cases of 2.0, 5.3, 10.9 and 27.5 nm thick films has been found to be 60, 95, 160 and 13 nm respectively. Interestingly, at higher fluence of 1x1015 ions cm-2 in case of 27.5 nm thick film, gold atoms from the film transported to a maximum depth of 265 nm in the substrate. The substrate silicon is found to be amorphous at the above fluence values where unusually large mass transport occurred. Enhanced diffusion has been explained on the basis of ion beam induced, flux dependent amorphous nature of the substrate, and transient beam induced temperature effects. This work confirms the absence of confinement effects that arise from spatially confined structures and existence of thermal and chemical reactions during ion irradiation.
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We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6x10^13, 1x10^14 and 5x10^14 ions cm-2 at a high beam flux of 6.3x1012 ions cm-2 s-1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6x1013 ions cm-2) transport has been found to be associated with the formation of gold silicide (Au5Si2). At a high fluence value of 5x10^14 ions cm-2, disassociation of gold silicide and out-diffusion lead to segregation of gold to defect - rich surface and interface region.
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