Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userProximity effects induced by a gold layer on La0.67Sr0.33MnO3 thin films
116
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We report about La0.67Sr0.33MnO3 single crystal manganite thin films in interaction with a gold capping layer. With respect to uncoated manganite layers of the same thickness, Au-capped 4 nm-thick manganite films reveal a dramatic reduction (about 185 K) of the Curie temperature TC and a lower saturation low-temperature magnetization M0. A sizeable TC reduction (about 60 K) is observed even when an inert SrTiO3 layer is inserted between the gold film and the 4 nm-thick manganite layer, suggesting that this effect might have an electrostatic origin.
rate research
Read More
We report a direct observation of segregation of gold atoms to the near surface regime due to 1.5 MeV Au2+ ion impact on isolated gold nanostructures deposited on silicon. Irradiation at fluences of 6x10^13, 1x10^14 and 5x10^14 ions cm-2 at a high beam flux of 6.3x1012 ions cm-2 s-1 show a maximum transported distance of gold atoms into the silicon substrate to be 60, 45 and 23 nm, respectively. At a lower fluence (6x1013 ions cm-2) transport has been found to be associated with the formation of gold silicide (Au5Si2). At a high fluence value of 5x10^14 ions cm-2, disassociation of gold silicide and out-diffusion lead to segregation of gold to defect - rich surface and interface region.
La0.67Sr0.33MnO3 (LSMO) thin films under compressive strain have an orthorhombic symmetry with (1-10)o and (001)o in-plane orientations. (The subscript o denotes the orthorhombic symmetry.) Here, we grew LSMO on cubic (LaAlO3)0.3-(Sr2AlTaO6)0.7 (LSAT) substrates and observed a uniaxial contribution to the magnetic anisotropy which is related to the orthorhombic crystal structure. Since the lattice mismatch is equal in the two directions, the general understanding of anisotropy in LSMO, which relates the uniaxial anisotropy to differences in strain, cannot explain the results. These findings suggest that the oxygen octahedra rotations associated with the orthorhombic structure, possibly resulting in different Mn-O-Mn bond angles and therefore a change in magnetic coupling between the [1-10]o and [001]o directions, determine the anisotropy. We expect these findings to lead to a better understanding of the microscopic origin of the magnetocrystalline anisotropy in LSMO.
When comparing a set of La0.67Sr0.33MnO3 (LSMO) samples, the Curie temperature (TC) of the samples is an important figure of merit for the sample quality. Therefore, a reliable method to determine TC is required. Here, a method based on the analysis of the magnetization loops is proposed.
Enhanced diffusion of gold atoms into silicon substrate has been studied in Au thin films of various thicknesses (2.0, 5.3, 10.9 and 27.5 nm) deposited on Si(111) and followed by irradiation with 1.5 MeV Au2+ at a flux of 6.3x10^12 ions cm-2 s-1 and fluence up to 1x10^15 ions cm-2. The high resolution transmission electron microscopy measurements showed the presence of gold silicide formation for the above-mentioned systems at fluence greater than equal to 1x1014 ions cm-2. The maximum depth to which the gold atoms have been diffused at a fluence of 1x10^14 ions cm-2 for the cases of 2.0, 5.3, 10.9 and 27.5 nm thick films has been found to be 60, 95, 160 and 13 nm respectively. Interestingly, at higher fluence of 1x1015 ions cm-2 in case of 27.5 nm thick film, gold atoms from the film transported to a maximum depth of 265 nm in the substrate. The substrate silicon is found to be amorphous at the above fluence values where unusually large mass transport occurred. Enhanced diffusion has been explained on the basis of ion beam induced, flux dependent amorphous nature of the substrate, and transient beam induced temperature effects. This work confirms the absence of confinement effects that arise from spatially confined structures and existence of thermal and chemical reactions during ion irradiation.
Graphene is a 2D material that displays excellent electronic transport properties with prospective applications in many fields. Inducing and controlling magnetism in the graphene layer, for instance by proximity of magnetic materials, may enable its utilization in spintronic devices. This paper presents fabrication and detailed characterization of single-layer graphene formed on the surface of epitaxial FeRh thin films. The magnetic state of the FeRh surface can be controlled by temperature, magnetic field or strain due to interconnected order parameters. Characterization of graphene layers by X-ray Photoemission and X-ray Absorption Spectroscopy, Low-Energy Ion Scattering, Scanning Tunneling Microscopy, and Low-Energy Electron Microscopy shows that graphene is single-layer, polycrystalline and covers more than 97% of the substrate. Graphene displays several preferential orientations on the FeRh(001) surface with unit vectors of graphene rotated by 30{deg}, 15{deg}, 11{deg}, and 19{deg} with respect to FeRh substrate unit vectors. In addition, the graphene layer is capable to protect the films from oxidation when exposed to air for several months. Therefore, it can be also used as a protective layer during fabrication of magnetic elements or as an atomically thin spacer, which enables incorporation of switchable magnetic layers within stacks of 2D materials in advanced devices.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
