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Register a new userComplex phase mixture and domain superstructure across a new lead-free ferroelectric/anti-ferroelectric morphotropic phase boundary
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We investigate the microstructural evolution in a ferroelectric to antiferroelectric phase transition at the morphotropic phase boundary in the Bi(1-x)SmxFeO3 system. Continuous Sm3+ substitution on the A-site induces short-range anti-parallel cation displacements as verified by the appearance of localized 1/4(110) weak spots in selected area electron diffraction patterns for 0.1<x<0.14 samples, and thus onset of antiferroelectricity. Kinetic Monte Carlo simulations confirm that increasing the strength of the anti-parallel interactions (i.e. increasing x) induces a ferroelectric to antiferroelectric transition. For 0.14<x<0.2 antiphase oxygen octahedra tilts induce complete antiferroelectricity.
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Recently, based on the phase-field modeling, it was predicted that Hf1-xZrxO2 (HZO) exhibits the morphotropic phase boundary (MPB) in its compositional phase diagram. Here, we investigate the effect of structural changes between tetragonal (t) and orthorhombic (o) phases on the ferroelectric and dielectric properties of HZO films to probe the existence of MPB region. The structural analysis show that by adjusting the ozone dosage during the atomic layer deposition process and annealing conditions, different ratios of t- to o-phases (f_(t/o) ) were achieved which consequently affect the ferroelectric and dielectric properties of the samples. Polarization versus electric field measurements show a remarkable increase in ferroelectric characteristics (Pr and Ec) of the sample that contains the minimum t-phase fraction (f_(t/o)~ 0.04). This sample shows the lowest dielectric constant compared to the other samples which is due to the formation of ferroelectric o-phase. The sample that contains the maximum f_(t/o)~ 0.41 demonstrates the highest dielectric response. By adjusting the f_(t/o), a large dielectric constant of ~ 55 is achieved. Our study reveals a direct relation between f_(t/o) and dielectric constant of HZO thin films which can be understood by considering the density of MPB region.
We report on the discovery of a lead-free morphotropic phase boundary in Sm doped BiFeO3 with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric (FE) to antiferroelectric (AFE) transition at approximately Bi0.86Sm0.14FeO3 with dielectric constant and out-of-plane piezoelectric coefficient comparable to those of epitaxial (001) oriented Pb(Zr,Ti)O3 (PZT) thin films at the MPB. The discovered composition may be a strong candidate of a Pb-free piezoelectric replacement of PZT.
Materials with formula of A2B2O7 is a famous family with more than 300 compounds, and have abundant properties, like ferroelectric, multiferroic, and photocatalyst properties, etc. Generally, two structures dominate this family, which are pyrochlore and perovskite-like layered (PL) structure. Previously, the structure and properties design of these materials are usually complex, and solid solutions, which complicates the manufacture, as well as introducing complexity in the study of the microscopic origins of the properties. Here, we report that the pyrochlore-PL structure change happened in pure Eu2Ti2O7 under high pressure and temperature, and the formed PL structure will transfer back by heating. These results reveal that the PL structure formed in PL-pyrochlore solid solutions, is due to tuning of the high-pressure formed PL structure in pure pyrochlore compounds to ambient pressure. These results indicate the high pressure and high temperature can be used to manipulate the crystal structures from pyrochlore to PL structure, or vice versa. Furthermore, the PL Eu2Ti2O7 was confirmed as a lead free ferroelectric material for the first time.
We report neutron inelastic scattering experiments on single crystal PbMg$_{1/3}$Nb$_{2/3}$O$_{3}$ doped with 32% PbTiO$_{3}$, a relaxor ferroelectric that lies close to the morphotropic phase boundary. When cooled under an electric field $mathbf{E} parallel$ [001] into tetragonal and monoclinic phases, the scattering cross section from transverse acoustic (TA) phonons polarized parallel to $mathbf{E}$ weakens and shifts to higher energy relative to that under zero-field-cooled conditions. Likewise, the scattering cross section from transverse optic (TO) phonons polarized parallel to $mathbf{E}$ weakens for energy transfers $4 leq hbar omega leq 9$ meV. However, TA and TO phonons polarized perpendicular to $mathbf{E}$ show no change. This anisotropic field response is similar to that of the diffuse scattering cross section, which, as previously reported, is suppressed when polarized parallel to $mathbf{E}$, but not when polarized perpendicular to $mathbf{E}$. Our findings suggest that the lattice dynamics and dynamic short-range polar correlations that give rise to the diffuse scattering are coupled.
Morphotropic phase boundaries (MPBs) show substantial piezoelectric and dielectric responses, which have practical applications. The predicted existence of MPB in HfO2-ZrO2 solid solution thin film has provided a new way to increase the dielectric properties of a silicon-compatible device. Here, we present a new fabrication design by which the density of MPB and consequently the dielectric constant of HfO2-ZrO2 thin film was considerably increased. The density of MPB was controlled by fabrication of a 10-nm [1 nm-Hf0.5Zr0.5O2 (Ferroelectric)/1 nm-ZrO2 (Antiferroelectric)] nanolaminate followed by an appropriate annealing process. The coexistence of orthorhombic and tetragonal structures, which are the origins of ferroelectric (FE) and antiferroelectric (AFE) behaviors, respectively, was structurally confirmed, and a double hysteresis loop that originates from AFE ordering, with some remnant polarization that originates from FE ordering, was observed in P-E curve. A remarkable increase in dielectric constant compared to the conventional HfO2-ZrO2 thin film was achieved by controlling the FE-AFE ratio. The fabrication process was performed at low temperature and the device is compatible with silicon technology, so the new design yields a device that has possible applications in near-future electronics.
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