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Register a new userPhonon coupling to dynamic short-range polar order in a relaxor ferroelectric near the morphotropic phase boundary
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We report neutron inelastic scattering experiments on single crystal PbMg$_{1/3}$Nb$_{2/3}$O$_{3}$ doped with 32% PbTiO$_{3}$, a relaxor ferroelectric that lies close to the morphotropic phase boundary. When cooled under an electric field $mathbf{E} parallel$ [001] into tetragonal and monoclinic phases, the scattering cross section from transverse acoustic (TA) phonons polarized parallel to $mathbf{E}$ weakens and shifts to higher energy relative to that under zero-field-cooled conditions. Likewise, the scattering cross section from transverse optic (TO) phonons polarized parallel to $mathbf{E}$ weakens for energy transfers $4 leq hbar omega leq 9$ meV. However, TA and TO phonons polarized perpendicular to $mathbf{E}$ show no change. This anisotropic field response is similar to that of the diffuse scattering cross section, which, as previously reported, is suppressed when polarized parallel to $mathbf{E}$, but not when polarized perpendicular to $mathbf{E}$. Our findings suggest that the lattice dynamics and dynamic short-range polar correlations that give rise to the diffuse scattering are coupled.
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Recently, based on the phase-field modeling, it was predicted that Hf1-xZrxO2 (HZO) exhibits the morphotropic phase boundary (MPB) in its compositional phase diagram. Here, we investigate the effect of structural changes between tetragonal (t) and orthorhombic (o) phases on the ferroelectric and dielectric properties of HZO films to probe the existence of MPB region. The structural analysis show that by adjusting the ozone dosage during the atomic layer deposition process and annealing conditions, different ratios of t- to o-phases (f_(t/o) ) were achieved which consequently affect the ferroelectric and dielectric properties of the samples. Polarization versus electric field measurements show a remarkable increase in ferroelectric characteristics (Pr and Ec) of the sample that contains the minimum t-phase fraction (f_(t/o)~ 0.04). This sample shows the lowest dielectric constant compared to the other samples which is due to the formation of ferroelectric o-phase. The sample that contains the maximum f_(t/o)~ 0.41 demonstrates the highest dielectric response. By adjusting the f_(t/o), a large dielectric constant of ~ 55 is achieved. Our study reveals a direct relation between f_(t/o) and dielectric constant of HZO thin films which can be understood by considering the density of MPB region.
Local inhomogeneities known as polar nanoregions (PNR) play a key role in governing the dielectric properties of relaxor ferroelectrics - a special class of material that exhibits an enormous electromechanical response and is easily polarized with an external field. Using neutron inelastic scattering methods, we show that the PNR can also significantly affect the structural properties of the relaxor ferroelectric Pb(Zn1/3Nb2/3)O3-4.5%PbTiO3 (PZN-4.5%PT). A strong interaction is found between the PNR and the propagation of sound waves, i.e. acoustic phonons, the visibility of which can be enhanced with an external electric field. A comparison between acoustic phonons propagating along different directions reveals a large asymmetry in the lattice dynamics that is induced by the PNR. We suggest that a phase instability induced by this PNR-phonon interaction may contribute to the ultrahigh piezoelectric response of this and related relaxor ferroelectric materials. Our results also naturally explain the emergence of the various observed monoclinic phases in these systems.
We have performed a series of neutron diffuse scattering measurements on a single crystal of the solid solution Pb(Zn$_{1/3}$Nb$_{2/3}$)O$_3$ (PZN) doped with 8% PbTiO$_3$ (PT), a relaxor compound with a Curie temperature T$_C sim 450$ K, in an effort to study the change in local polar orders from the polar nanoregions (PNR) when the material enters the ferroelectric phase. The diffuse scattering intensity increases monotonically upon cooling in zero field, while the rate of increase varies dramatically around different Bragg peaks. These results can be explained by assuming that corresponding changes occur in the ratio of the optic and acoustic components of the atomic displacements within the PNR. Cooling in the presence of a modest electric field $vec{E}$ oriented along the [111] direction alters the shape of diffuse scattering in reciprocal space, but does not eliminate the scattering as would be expected in the case of a classic ferroelectric material. This suggests that a field-induced redistribution of the PNR has taken place.
We have investigated heteroepitaxial films of Sm-doped BiFeO3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron X-ray diffraction, carried out in a temperature range of 25C to 700C, reveals substantial phase coexistence as one changes temperature to crossover from a low-temperature PbZrO3-like phase to a high-temperature orthorhombic phase. We also examine changes due to strain for films greater or less than the critical thickness for misfit dislocation formation. Particularly, we note that thicker films exhibit a substantial volume collapse associated with the structural transition that is suppressed in strained thin films.
We investigate the microstructural evolution in a ferroelectric to antiferroelectric phase transition at the morphotropic phase boundary in the Bi(1-x)SmxFeO3 system. Continuous Sm3+ substitution on the A-site induces short-range anti-parallel cation displacements as verified by the appearance of localized 1/4(110) weak spots in selected area electron diffraction patterns for 0.1<x<0.14 samples, and thus onset of antiferroelectricity. Kinetic Monte Carlo simulations confirm that increasing the strength of the anti-parallel interactions (i.e. increasing x) induces a ferroelectric to antiferroelectric transition. For 0.14<x<0.2 antiphase oxygen octahedra tilts induce complete antiferroelectricity.
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