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Register a new userStable single photon source in near infrared
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Owing to their unsurpassed photostability, defects in solids may be ideal candidates for single photon sources. Here we report on generation of single photons by optical excitation of a yet unexplored defect in diamond, the nickel-nitrogen complex (NE8) centre. The most striking feature of the defect is its emission bandwidth of 1.2 nm at room temperature. The emission wavelength of the defect is around 800 nm, which is suitable for telecom fibres. In addition, in this spectral region little background light from the diamond bulk material is detected. Consequently, a high contrast in antibunching measurements is achieved.
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We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$mu$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.
In this paper, we study the optical properties of single defects emitting in the near infrared in nanodiamonds at liquid helium temperature. The nanodiamonds are synthesized using a microwave chemical vapor deposition method followed by nickel implantation and annealing. We show that single defects exhibit several striking features at cryogenic temperature: the photoluminescence is strongly concentrated into a sharp zero-phonon line in the near infrared, the radiative lifetime is in the nanosecond range and the emission is perfectly linearly polarized. The spectral stability of the defects is then investigated. An optical resonance linewidth of 4 GHz is measured using resonant excitation on the zero-phonon line. Although Fourier-transform limited emission is not achieved, our results show that it might be possible to use consecutive photons emitted in the near infrared by single defects in diamond nanocrystals to perform two photon interference experiments, which are at the heart of linear quantum computing protocols.
We report 100% duty cycle generation of sub-MHz single photon pairs at the Rubidium D$_1$ line using cavity-enhanced spontaneous parametric downconversion. The temporal intensity crosscorrelation function exhibits a bandwidth of $666 pm 16$ kHz for the single photons, an order of magnitude below the natural linewidth of the target transition. A half-wave plate inside our cavity helps to achieve triple resonance between pump, signal and idler photon, reducing the bandwidth and simplifying the locking scheme. Additionally, stabilisation of the cavity to the pump frequency enables the 100% duty cycle. These photons are well-suited for storage in quantum memory schemes with sub-natural linewidths, such as gradient echo memories.
We report on the observation of single colour centers in natural diamond samples emitting in the near infrared region when optically excited. Photoluminescence of these single emitters have several striking features, such as a narrow-band fully polarized emission (FWHM 2 nm) around 780 nm, a short excited-state lifetime of about 2 ns, and perfect photostability at room temperature under our excitation conditions. We present a detailed study of their photophysical properties. Development of a triggered single-photon source relying on this single colour centre is discussed in the prospect of its application to quantum key distribution.
In the field of quantum photon sources, single photon emitter from solid is of fundamental importance for quantum computing, quantum communication, and quantum metrology. However, it has been an ultimate but seemingly distant goal to find the single photon sources that stable at room or high temperature, with high-brightness and broad ranges emission wavelength that successively cover ultraviolet to infrared in one host material. Here, we report an ultraviolet to near-infrared broad-spectrum single photon emitters (SPEs) based on a wide band-gap semiconductor material hexagonal boron nitride (hBN). The bright, high purity and stable SPEs with broad-spectrum are observed by using the resonant excitation technique. The single photon sources here can be operated at liquid helium, room temperature and even up to 1100 K. Depending on the excitation laser wavelengths, the SPEs can be dramatically observed from 357 nm to 896 nm. The single photon purity is higher than to 90 percentage and the narrowest linewidth of SPE is down to $sim$75 $mu$eV at low temperature, which reaches the resolution limit of our spectrometer. Our work not only paves a way to engineer a monolithic semiconductor tunable SPS, but also provides fundamental experimental evidence to understand the electronic and crystallographic structure of SPE defect states in hBN.
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