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Register a new userRadiation Induced Damage in GaAs Particle Detectors
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Nick Brook HEP Glasgow
Publication date
1997
fields
Physics
and research's language is
English
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The motivation for investigating the use of GaAs as a material for detecting particles in experiments for High Energy Physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials that are to be used in experiments at future accelerators where the radiation environments would exclude all but the most radiation resistant of detector types.
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Aging phenomena constitute one of the most complex and serious potential problems which could limit, or severely impair, the use of gaseous detectors in unprecedented harsh radiation environments. Long-term operation in high-intensity experiments of the LHC-era not only demands extraordinary radiation hardness of construction materials and gas mixtures but also very specific and appropriate assembly procedures and quality checks during detector construction and testing. Recent experimental data from hadron beams is discussed. It is shown that the initial stage of radiation tests, usually performed under isolated laboratory conditions, may not offer the full information needed to extrapolate to the long-term performance of real and full-size detectors at high energy physics facilities. Major factors, closely related to the capability of operating at large localized ionization densities, and which could lead to operation instabilities and subsequent aging phenomena in gaseous detectors, are summarized. Finally, an overview of aging experience with state-of-the-art gas detectors in experiments with low- and high-intensity radiation environments is given with a goal of providing a set of rules, along with some caveat, for the construction and operation of gaseous detectors in high luminosity experiments.
Radiation damage effects represent one of the limits for technologies to be used in harsh radiation environments as space, radiotherapy treatment, high-energy phisics colliders. Different technologies have known tolerances to different radiation fields and should be taken into account to avoid unexpected failures which may lead to unrecoverable damages to scientific missions or patient health.
The use of Silicon Photo-Multipliers (SiPMs) has become popular in the design of High Energy Physics experimental apparatus with a growing interest for their application in detector area where a significant amount of non-ionising dose is delivered. For these devices, the main effect caused by the neutron flux is a linear increase of the leakage current. In this paper, we present a technique that provides a partial recovery of the neutron damage on SiPMs by means of an Electrical Induced Annealing. Tests were performed on a sample of three SiPM arrays (2 $times$ 3) of 6 mm$^2$ cells with 50 {mu}m pixel sizes: two from Hamamatsu and one from SensL. These SiPMs were irradiated up to an integrated neutron flux up to 8 $times$ 10$^{11}$ n$_{1MeV-eq}$/cm$^2$. Our techniques allowed to reduced the leakage current of a factor ranging between 15-20 depending on the overbias used and the SiPM vendor.
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
Cerium-doped Cs$_2$LiYCl$_6$ (CLYC) and Cs$_2$LiLaBr$_x$Cl$_{6-x}$ (CLLBC) are scintillators in the elpasolite family that are attractive options for resource-constrained applications due to their ability to detect both gamma rays and neutrons within a single volume. Space-based detectors are one such application, however, the radiation environment in space can over time damage the crystal structure of the elpasolites, leading to degraded performance. We have exposed 4 samples each of CLYC and CLLBC to 800 MeV protons at the Los Alamos Neutron Science Center. The samples were irradiated with a total number of protons of 1.3$times$10$^{9}$, 1.3$times$10$^{10}$, 5.2$times$10$^{10}$, and 1.3$times$10$^{11}$, corresponding to estimated doses of 0.14, 1.46, 5.82, and 14.6 kRad, respectively on the CLYC samples and 0.14, 1.38, 5.52, and 13.8 kRad, respectively on the CLLBC samples. We report the impact these radiation doses have on the light output, activation, gamma-ray energy resolution, pulse shapes, and pulse-shape discrimination figure of merit for CLYC and CLLBC.
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