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Register a new userMeasurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors
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Added by
Francesco Moscatelli
Publication date
2016
fields
Physics
and research's language is
English
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In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1{div}2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures.
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We report a precise TCAD simulation for low gain avalanche detector (LGAD) with calibration by secondary ion mass spectroscopy (SIMS). The radiation model - LGAD Radiation Damage Model (LRDM) combines local acceptor degeneration with global deep energy levels is proposed. The LRDM could predict the leakage current level and the behavior of capacitance for irradiated LGAD sensor at -30 $^{circ}$C after irradiation fluence $rm Phi_{eq}=2.5 times 10^{15} ~n_{eq}/cm^{2}$.
Radiation damage effects represent one of the limits for technologies to be used in harsh radiation environments as space, radiotherapy treatment, high-energy phisics colliders. Different technologies have known tolerances to different radiation fields and should be taken into account to avoid unexpected failures which may lead to unrecoverable damages to scientific missions or patient health.
The p-type point-contact germanium detectors have been adopted for light dark matter WIMP searches and the studies of low energy neutrino physics. These detectors exhibit anomalous behavior to events located at the surface layer. The previous spectral shape method to identify these surface events from the bulk signals relies on spectral shape assumptions and the use of external calibration sources. We report an improved method in separating them by taking the ratios among different categories of in situ event samples as calibration sources. Data from CDEX-1 and TEXONO experiments are re-examined using the ratio method. Results are shown to be consistent with the spectral shape method.
Aging phenomena constitute one of the most complex and serious potential problems which could limit, or severely impair, the use of gaseous detectors in unprecedented harsh radiation environments. Long-term operation in high-intensity experiments of the LHC-era not only demands extraordinary radiation hardness of construction materials and gas mixtures but also very specific and appropriate assembly procedures and quality checks during detector construction and testing. Recent experimental data from hadron beams is discussed. It is shown that the initial stage of radiation tests, usually performed under isolated laboratory conditions, may not offer the full information needed to extrapolate to the long-term performance of real and full-size detectors at high energy physics facilities. Major factors, closely related to the capability of operating at large localized ionization densities, and which could lead to operation instabilities and subsequent aging phenomena in gaseous detectors, are summarized. Finally, an overview of aging experience with state-of-the-art gas detectors in experiments with low- and high-intensity radiation environments is given with a goal of providing a set of rules, along with some caveat, for the construction and operation of gaseous detectors in high luminosity experiments.
During the era of the High Luminosity LHC (HL-LHC) the devices in its experiments will be subjected to increased radiation levels with high fluxes of neutrons and charged hadrons, especially in the inner detectors. A systematic program of radiation tests with neutrons and charged hadrons is being carried out by the CMS and ATLAS Collaborations in view of the upgrade of the experiments, in order to cope with the higher luminosity at HL-LHC and the associated increase in the pile-up events and radiation fluxes. In this work, results from a complementary radiation study with $^{60}$Co-$gamma$ photons are presented. The doses are equivalent to those that the outer layers of the silicon tracker systems of the two big LHC experiments will be subjected to. The devices in this study are float-zone oxygenated p-type MOS capacitors. The results of CV measurements on these devices are presented as a function of the total absorbed radiation dose following a specific annealing protocol. The measurements are compared with the results of a TCAD simulation.
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