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Register a new userWeak coupling interactions of colloidal lead sulphide nanocrystals with silicon photonic crystal nanocavities near 1.55 microns at room temperature
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We observe the weak coupling of lead sulphide nanocrystals to localized defect modes of 2-dimensional silicon nanocavities. Cavity resonances characterized with ensemble nanocrystals are verified with cold-cavity measurements using integrated waveguides. Polarization dependence of the cavity field modes is observed. The linewidths measured in coupling experiments are broadened in comparison to the cold-cavity characterization, partly due to large homogeneous linewidths of the nanocrystals. The calculated Purcell factor for a single exciton is 75, showing promise toward applications in single photon systems. These novel light sources operate near 1.55 micron wavelengths at room temperature, permitting integration with current fiber communications networks.
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One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3 . Photoluminescence from the cavity modes is observed in the visible wavelength range 600-820 nm. Studies of the lossy characteristics of the cavities are conducted at varying temperatures and pump powers. Free carrier absorption effects are found to be significant at pump powers as low as a few hundred nanowatts.
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({Delta}{lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.
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A photonic crystal nanocavity with a Quality (Q) factor of 2.3 x 10^5, a mode volume of 0.55($lambda/n$)^3, and an operating wavelength of 637 nm is designed in a silicon nitride (SiN_x) ridge waveguide with refractive index of 2.0. The effect on the cavity Q factor and mode volume of single diamond nanocrystals of various sizes and locations embedded in the center and on top of the nanocavity is simulated, demonstrating that Q > 2 x 10^5 is achievable for realistic parameters. An analysis of the figures of merit for cavity quantum electrodynamics reveals that strong coupling between an embedded diamond nitrogen-vacancy center and the cavity mode is achievable for a range of cavity dimensions.
We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high spontaneous emission coupling factor beta. Lasing is confirmed by measuring the second order autocorrelation function. A smooth transition from chaotic to coherent emission is observed, and coherent emission is obtained at 8 times the threshold power.
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