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Register a new userDemonstration of coherent emission from high-$beta$ photonic crystal nanolasers at room temperature
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Authors
Richard Hostein
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We report on lasing at room temperature and at telecommunications wavelength from photonic crystal nanocavities based on InAsP/InP quantum dots. Such laser cavities with a small modal volume and high quality factor display a high spontaneous emission coupling factor beta. Lasing is confirmed by measuring the second order autocorrelation function. A smooth transition from chaotic to coherent emission is observed, and coherent emission is obtained at 8 times the threshold power.
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We report on the higher-order photon correlations of a high-$beta$ nanolaser under pulsed excitation at room temperature. Using a multiplexed four-element superconducting single photon detector we measured g$^{(n)}(vec{0})$ with $n$=2,3,4. All orders of correlation display partially chaotic statistics, even at four times the threshold excitation power. We show that this departure from coherence and Poisson statistics is due to the quantum fluctuations associated with the small number of dipoles and photons involved in the lasing process.
We experimentally demonstrate high Quality factor dual-polarized TE-TM photonic crystal nanobeam cavities. The free-standing nanobeams are fabricated in a 500 nm thick silicon layer, and are probed using both tapered optical fiber and free-space resonant scattering set-ups. We measure Q-factors greater than 10^4 for both TM and TE modes, and observe large fiber transmission drops (0.3 -- 0.4) at the TM mode resonances.
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({Delta}{lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.
High power single mode quantum cascade lasers with a narrow far field are important for several applications including surgery or military countermeasure. Existing technologies suffer from drawbacks such as operation temperature and scalability. In this paper we introduce a fabrication approach that potentially solves simultaneously these remaining limitations. We demonstrate and characterize deep etched, buried photonic crystal quantum cascade lasers emitting around a wavelength of 8.5 {mu}m. The active region was dry etched before being regrown with semi-insulating Fe:InP. This fabrication strategy results in a refractive index contrast of 10% allowing good photonic mode control, and simultaneously provides good thermal extraction during operation. Single mode emission with narrow far field pattern and peak powers up to 0.88 W at 263 K were recorded from the facet of the photonic crystal laser, and lasing operation was maintained up to room temperature. The lasing modes emitted from square photonic crystal mesas with a side length of 550{mu}m, were identified as slow Bloch photonic crystal modes by means of three-dimensional photonic simulations and measurements.
Non-linear dynamical systems involving small populations of individuals may sustain oscillations in the population densities arising from the discrete changes in population numbers due to random events. By applying these ideas to nanolasers operating with small numbers of emitting dipoles and photons at threshold, we show that such lasers should display photon and dipole population cycles above threshold, which should be observable as a periodic modulation in the second-order correlation function of the nanolaser output. Such a modulation was recently reported in a single-mode vertical-cavity surface-emitting semiconductor laser.
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