One dimensional nanobeam photonic crystal cavities are fabricated in silicon dioxide with silicon nanocrystals. Quality factors of over 9 x 10^3 are found in experiment, matching theoretical predictions, with mode volumes of 1.5(lambda/n)^3 . Photoluminescence from the cavity modes is observed in the visible wavelength range 600-820 nm. Studies of the lossy characteristics of the cavities are conducted at varying temperatures and pump powers. Free carrier absorption effects are found to be significant at pump powers as low as a few hundred nanowatts.
We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1,250 - 1,600 nm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.
We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from crystalline silicon at ~1.10 eV we observe a broad defect band luminescence from ~1.05-1.09 eV. Spatially resolved spectroscopy demonstrates that this defect band is present only in the region where air-holes have been etched during the fabrication process. Detectable emission from the cavity mode persists up to room-temperature, in strong contrast the background emission vanishes for T > 150 K. An Ahrrenius type analysis of the temperature dependence of the luminescence signal recorded either in-resonance with the cavity mode, or weakly detuned, suggests that the higher temperature stability may arise from an enhanced internal quantum efficiency due to the Purcell-effect.
A photonic crystal nanocavity with a Quality (Q) factor of 2.3 x 10^5, a mode volume of 0.55($lambda/n$)^3, and an operating wavelength of 637 nm is designed in a silicon nitride (SiN_x) ridge waveguide with refractive index of 2.0. The effect on the cavity Q factor and mode volume of single diamond nanocrystals of various sizes and locations embedded in the center and on top of the nanocavity is simulated, demonstrating that Q > 2 x 10^5 is achievable for realistic parameters. An analysis of the figures of merit for cavity quantum electrodynamics reveals that strong coupling between an embedded diamond nitrogen-vacancy center and the cavity mode is achievable for a range of cavity dimensions.
By virtue of a silicon high-Q photonic crystal nanocavity, we propose and examine theoretically interactions between a stationary electron spin qubit of a semiconductor nanocrystal and a flying photon qubit. Firstly, we introduce, derive and demonstrate for the first time the explicit conditions towards realization of a spin-photon two-qubit phase gate, and propose these interactions as a generalized quantum interface for quantum information processing. Secondly, we examine novel single-spin-induced reflections as direct evidence of intrinsic bare and dressed modes in our coupled nanocrystal-cavity system. The excellent physical integration of this silicon system provides tremendous potential for large-scale quantum information processing.
We observe the weak coupling of lead sulphide nanocrystals to localized defect modes of 2-dimensional silicon nanocavities. Cavity resonances characterized with ensemble nanocrystals are verified with cold-cavity measurements using integrated waveguides. Polarization dependence of the cavity field modes is observed. The linewidths measured in coupling experiments are broadened in comparison to the cold-cavity characterization, partly due to large homogeneous linewidths of the nanocrystals. The calculated Purcell factor for a single exciton is 75, showing promise toward applications in single photon systems. These novel light sources operate near 1.55 micron wavelengths at room temperature, permitting integration with current fiber communications networks.