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Register a new userAnomalous electric conductions in KSbO3-type metallic rhenium oxides
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Single crystals of KSbO3-type rhenium oxides, La4Re6O$19, Pb6Re6O19, Sr2Re3O9 and Bi3Re3O11, were synthesized by a hydrothermal method. Their crystal structures can be regarded as a network of three-dimensional orthogonal-dimer lattice of edge-shared ReO6 octahedra. All of them exhibit small magnitude of Pauli paramagnetism, indicating metallic electronic states without strong electron correlations. The resistivity of these rhenates, except Bi3Re3O11, have a temperature dependence of $rho(T)=rho_{0}+AT^{n}$ $(n approx 1.6)$ in a wide temperature range between 5 K and 300 K, which is extraordinary for three-dimensional metals without strong electron correlations. The resistivity of Bi3Re3O11 shows an anomaly around at 50 K, where the magnetic susceptibility also detects a deviation from ordinary Pauli paramagnetism.
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The RMn2O5 (R=Pr, Nd, Sm, and Eu) oxides showing magnetoelectric (ME) behavior have been prepared in polycrystalline form by a standard citrate route. The lattice parameters, obtained from the powder XRD analysis, follow the rare-earth contraction indicating the trivalent character of the R ions. Cusp-like anomalies in the magnetic susceptibility curve and sharp peaks in the specific heat were reported at the corresponding temperatures in RMn2O5 (R=Pr, Nd, Sm, and Eu) indicating the magnetic or electric ordering transitions.
Controlling quantum critical phenomena in strongly correlated electron systems, which emerge in the neighborhood of a quantum phase transition, is a major challenge in modern condensed matter physics. Quantum critical phenomena are generated from the delicate balance between long-range order and its quantum fluctuation. So far, the nature of quantum phase transitions has been investigated by changing a limited number of external parameters such as pressure and magnetic field. We propose a new approach for investigating quantum criticality by changing the strength of quantum fluctuation that is controlled by the dimensional crossover in metallic quantum well (QW) structures of strongly correlated oxides. With reducing layer thickness to the critical thickness of metal-insulator transition, crossover from a Fermi liquid to a non-Fermi liquid has clearly been observed in the metallic QW of SrVO$_3$ by textit{in situ} angle-resolved photoemission spectroscopy. Non-Fermi liquid behavior with the critical exponent ${alpha} = 1$ is found to emerge in the two-dimensional limit of the metallic QW states, indicating that a quantum critical point exists in the neighborhood of the thickness-dependent Mott transition. These results suggest that artificial QW structures provide a unique platform for investigating novel quantum phenomena in strongly correlated oxides in a controllable fashion.
In transition metal perovskites (ABO3) most physical properties are tunable by structural parameters such as the rotation of the BO6 octahedra. Examples include the Neel temperature of orthoferrites, the conductivity of mixed-valence manganites, or the band gap of rare-earth scandates. Since oxides often host large internal electric dipoles and can accommodate heavy elements, they also emerge as prime candidates to display Rashba spin-orbit coupling, through which charge and spin currents may be efficiently interconverted. However, despite a few experimental reports in SrTiO3-based interface systems, the Rashba interaction has been little studied in these materials, and its interplay with structural distortions remain unknown. In this Letter, we identify a bismuth-based perovskite with a giant, electrically-switchable Rashba interaction whose amplitude can be controlled by both the ferroelectric polarization and the breathing mode of oxygen octahedra. This particular structural parameter arises from the strongly covalent nature of the Bi-O bonds, reminiscent of the situation in perovskite nickelates. Our results not only provide novel strategies to craft agile spin-charge converters but also highlight the relevance of covalence as a powerful handle to design emerging properties in complex oxides.
Quantum anomalous Hall (QAH) insulator is a topological phase which exhibits chiral edge states in the absence of magnetic field. The celebrated Haldane model is the first example of QAH effect, but difficult to realize. Here, we predict the two-dimensional single-atomic-layer V2O3 with a honeycomb-Kagome structure is a QAH insulator with a large band gap (large than 0.1 eV) and a high ferromagnetic Curie temperature (about 900 K). Combining the first-principle calculations with the effective Hamiltonian analysis, we find that the spin-majority dxy and dyz orbitals of V atoms on the honeycomb lattice form a massless Dirac cone near the Fermi level which becomes massive when the on-site spin-orbit coupling is included. Interestingly, we find that the large band gap is caused by a cooperative effect of electron correlation and spin-orbit coupling. Both first-principle calculations and the effective Hamiltonian analysis confirm that 2D V2O3 has a non-zero Chern number (i.e., one). Our work paves a new direction towards realizing the QAH effect at room temperature.
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of {alpha}-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in {alpha}-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.
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