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Register a new userSemiconductor quantum dots in high magnetic fields: The composite-fermion view
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We review and extend the composite fermion theory for semiconductor quantum dots in high magnetic fields. The mean-field model of composite fermions is unsatisfactory for the qualitative physics at high angular momenta. Extensive numerical calculations demonstrate that the microscopic CF theory, which incorporates interactions between composite fermions, provides an excellent qualitative and quantitative account of the quantum dot ground state down to the largest angular momenta studied, and allows systematic improvements by inclusion of mixing between composite fermion Landau levels (called $Lambda$ levels).
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Interacting electrons in a semiconductor quantum dot at strong magnetic fields exhibit a rich set of states, including correlated quantum fluids and crystallites of various symmetries. We develop in this paper a perturbative scheme based on the correlated basis functions of the composite-fermion theory, that allows a systematic improvement of the wave functions and the energies for low-lying eigenstates. For a test of the method, we study systems for which exact results are known, and find that practically exact answers are obtained for the ground state wave function, ground state energy, excitation gap, and the pair correlation function. We show how the perturbative scheme helps resolve the subtle physics of competing orders in certain anomalous cases.
We report transport experiments on graphene quantum dots. We focus on excited state spectra in the near vicinity of the charge neutrality point and signatures of the electron-hole crossover as a function of a perpendicular magnetic field. Coulomb blockade resonances of a 50 nm wide and 80 nm long dot are visible at all gate voltages across the transport gap ranging from hole to electron transport. The magnetic field dependence of more than 40 states as a function of the back gate voltage can be interpreted in terms of the unique evolution of the diamagnetic spectrum of a graphene dot including the formation of the E = 0 Landau level, situated in the center of the transport gap, and marking the electron-hole crossover.
We present a new method for calculating ground state properties of quantum dots in high magnetic fields. It takes into account the equilibrium positions of electrons in a Wigner cluster to minimize the interaction energy in the high field limit. Assuming perfect spin alignment the many-body trial function is a single Slater determinant of overlapping oscillator functions from the lowest Landau level centered at and near the classical equilibrium positions. We obtain an analytic expression for the ground state energy and present numerical results for up to N=40.
We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.
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