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Register a new userTheory of Fano-Kondo effect in quantum dot systems: temperature dependence of the Fano line shapes
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The Fano-Kondo effect in zero-bias conductance is studied based on a theoretical model for the T-shaped quantum dot by the finite temperature density matrix renormalization group method. The modification of the two Fano line shapes at much higher temperatures than the Kondo temperature is also investigated by the effective Fano parameter estimated as a fitting parameter.
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We consider the theory of Kondo effect and Fano factor energy dependence for magnetic impurity (Co) on graphene. We have performed a first principles calculation and find that the two dimensional $E_1$ representation made of $d_{xz},d_{yz}$ orbitals is likely to be responsible for the hybridization and ultimately Kondo screening for cobalt on graphene. There are few high symmetry sites where magnetic impurity atom can be adsorbed. For the case of Co atom in the middle of hexagon of carbon lattice we find anomalously large Fano $q$-factor, $qapprox 80$ and strongly suppressed coupling to conduction band. This anomaly is a striking example of quantum mechanical interference related to the Berry phase inherent to graphene band structure.
Linear conductance across a large quantum dot via a single level e_0 with large hybridization to the contacts is strongly sensitive to quasi-bound states localized in the dot and weakly coupled to e_0. It oscillates with the gate voltage due to interference of the Fano type. At low temperature and Coulomb blockade, Kondo correlations damp the oscillations on an extended range of gate voltage values, by freezing the occupancy of the e_0 level itself. As a consequence, antiresonances of Fano origin are washed out. The results are in good correspondence with experimental data for a large quantum dot in the semi-open regime.
We investigate the Fano-Kondo interplay in an Aharonov-Bohm ring with an embedded non-interacting quantum dot and a Coulomb interacting quantum dot. Using a slave-boson mean-field approximation we diagonalize the Hamiltonian via scattering matrix theory, and derive the conductance in the form of a Fano expression, which depends on the mean field parameters. We predict that in the Kondo regime the magnetic field leads to a gapped energy level spectrum due to hybridisation of the non-interacting QD state and the Kondo state, and can quantum-mechanically alter the electrons path preference. We demonstrate that an abrupt symmetry change in the Fano resonance, as seen experimentally, could be a consequence of an underlying Kondo channel.
We investigate theoretically the transport properties of the side-coupled double quantum dots in connection with the experimental study of Sasaki {it et al.} Phys.Rev.Lett.{bf 103}, 266806 (2009). The novelty of the set-up consists in connecting the Kondo dot directly to the leads, while the side dot provides an interference path which affects the Kondo correlations. We analyze the oscillations of the source-drain current due to the periodical Coulomb blockade of the many-level side-dot at the variation of the gate potential applied on it. The Fano profile of these oscillations may be controlled by the temperature, gate potential and interdot coupling. The non-equilibrium conductance of the double dot system exhibits zero bias anomaly which, besides the usual enhancement, may show also a suppression (a dip-like aspect) which occurs around the Fano {it zero}. In the same region, the weak temperature dependence of the conductance indicates the suppression of the Kondo effect. Scaling properties of the non-equilibrium conductance in the Fano-Kondo regime are discussed. Since the SIAM Kondo temperature is no longer the proper scaling parameter, we look for an alternative specific to the double-dot. The extended Anderson model, Keldysh formalism and equation of motion technique are used.
We consider the electronic transport through a Rashba quantum dot coupled to ferromagnetic leads. We show that the interference of localized electron states with resonant electron states leads to the appearance of the Fano-Rashba effect. This effect occurs due to the interference of bound levels of spin-polarized electrons with the continuum of electronic states with an opposite spin polarization. We investigate this Fano-Rashba effect as a function of the applied magnetic field and Rashba spin-orbit coupling.
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