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Register a new userCoulomb oscillations of the Fano-Kondo effect and zero bias anomalies in the double dot meso-transistor
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We investigate theoretically the transport properties of the side-coupled double quantum dots in connection with the experimental study of Sasaki {it et al.} Phys.Rev.Lett.{bf 103}, 266806 (2009). The novelty of the set-up consists in connecting the Kondo dot directly to the leads, while the side dot provides an interference path which affects the Kondo correlations. We analyze the oscillations of the source-drain current due to the periodical Coulomb blockade of the many-level side-dot at the variation of the gate potential applied on it. The Fano profile of these oscillations may be controlled by the temperature, gate potential and interdot coupling. The non-equilibrium conductance of the double dot system exhibits zero bias anomaly which, besides the usual enhancement, may show also a suppression (a dip-like aspect) which occurs around the Fano {it zero}. In the same region, the weak temperature dependence of the conductance indicates the suppression of the Kondo effect. Scaling properties of the non-equilibrium conductance in the Fano-Kondo regime are discussed. Since the SIAM Kondo temperature is no longer the proper scaling parameter, we look for an alternative specific to the double-dot. The extended Anderson model, Keldysh formalism and equation of motion technique are used.
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The Fano-Kondo effect in zero-bias conductance is studied based on a theoretical model for the T-shaped quantum dot by the finite temperature density matrix renormalization group method. The modification of the two Fano line shapes at much higher temperatures than the Kondo temperature is also investigated by the effective Fano parameter estimated as a fitting parameter.
We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a function of a small perpendicular magnetic field |B| lesssim 50mT. We discuss possible explanations of this effect and interpret it by means of a fine tuning of the energy mismatch of the single dot levels of the two quantum dots. The observed degree of control implies important consequences for applications in quantum information processing.
We investigate the Fano-Kondo interplay in an Aharonov-Bohm ring with an embedded non-interacting quantum dot and a Coulomb interacting quantum dot. Using a slave-boson mean-field approximation we diagonalize the Hamiltonian via scattering matrix theory, and derive the conductance in the form of a Fano expression, which depends on the mean field parameters. We predict that in the Kondo regime the magnetic field leads to a gapped energy level spectrum due to hybridisation of the non-interacting QD state and the Kondo state, and can quantum-mechanically alter the electrons path preference. We demonstrate that an abrupt symmetry change in the Fano resonance, as seen experimentally, could be a consequence of an underlying Kondo channel.
We report measurements of the Kondo effect in a double quantum dot (DQD), where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage on both dots shows a zero-bias peak in conductance, analogous to that observed for spin Kondo in single dots. Breaking the orbital degeneracy splits the Kondo resonance in the tunneling density of states above and below the Fermi energy of the leads, with the resonances having different pseudospin character. Using pseudospin-resolved spectroscopy, we demonstrate the pseudospin character by observing a Kondo peak at only one sign of the bias voltage. We show that even when the pseudospin states have very different tunnel rates to the leads, a Kondo temperature can be consistently defined for the DQD system.
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward a dot strongly coupled to the leads. In addition to Coulomb blockade, when the dot is strongly coupled to the leads, we observe the appearance of a zero bias conductance peak due to the Kondo effect. The Kondo peak splits in a magnetic field, and the splitting scales linearly with the applied field. We also observe a transition from pure Coulomb blockade to peaks with a Fano lineshape.
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