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Register a new userTheory of nonlinear optical spectroscopy of electron spin coherence in quantum dots
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We study in theory the generation and detection of electron spin coherence in nonlinear optical spectroscopy of semiconductor quantum dots doped with single electrons. In third-order differential transmission spectra, the inverse width of the ultra-narrow peak at degenerate pump and probe frequencies gives the spin relaxation time ($T_1$), and that of the Stoke and anti-Stoke spin resonances gives the effective spin dephasing time due to the inhomogeneous broadening ($T_2^*$). The spin dephasing time excluding the inhomogeneous broadening effect ($T_2$) is measured by the inverse width of ultra-narrow hole-burning resonances in fifth-order differential transmission spectra.
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We report on the coherent optical excitation of electron spin polarization in the ground state of charged GaAs quantum dots via an intermediate charged exciton (trion) state. Coherent optical fields are used for the creation and detection of the Raman spin coherence between the spin ground states of the charged quantum dot. The measured spin decoherence time, which is likely limited by the nature of the spin ensemble, approaches 10 ns at zero field. We also show that the Raman spin coherence in the quantum beats is caused not only by the usual stimulated Raman interaction but also by simultaneous spontaneous radiative decay of either excited trion state to a coherent combination of the two spin states.
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We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($sim$0.05$, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger dot sizes that could ameliorate constraints on device fabrication. Compared to electrons in quantum dots, hole qubits do not suffer from the presence of nearby quantum levels (e.g., valley states) that can compete with spins as qubits. The strong spin-orbit coupling in Ge quantum wells may be harnessed to implement electric-dipole spin resonance, leading to gate times of several nanoseconds for single-qubit rotations. The microscopic mechanism of this spin-orbit coupling is discussed, along with its implications for quantum gates based on electric-dipole spin resonance, stressing the importance of coupling terms that arise from the underlying cubic crystal field. Our results provide a theoretical foundation for recent experimental advances in Ge hole-spin qubits.
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