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Register a new userControlled Contact to a C60 Molecule
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Added by
J\\\"org Kr\\\"oger
Publication date
2006
fields
Physics
and research's language is
English
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The conductance of C60 on Cu(100) is investigated with a low-temperature scanning tunneling microscope. At the transition from tunneling to the contact regime the conductance of C60 adsorbed with a pentagon-hexagon bond rises rapidly to 0.25 conductance quanta G0. An abrupt conductance jump to G0 is observed upon further decreasing the distance between the instruments tip and the surface. Ab-initio calculations within density functional theory and non-equilibrium Greens function techniques explain the experimental data in terms of the conductance of an essentially undeformed C60. From a detailed analysis of the crossover from tunneling to contact we conclude that the conductance in this region is strongly affected by structural fluctuations which modulate the tip-molecule distance.
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The orientation of individual C60 molecules adsorbed on Cu(100) is reversibly switched when the tip of a scanning tunneling microscope is approached to contact the molecule. The probability of switching rises sharply upon displacing the tip beyond a threshold. A mechanical mechanism is suggested to induce the rotation of the molecule.
Force and conductance were simultaneously measured during the formation of Cu-C60 and C60-C60 contacts using a combined cryogenic scanning tunneling and atomic force microscope. The contact geometry was controlled with submolecular resolution. The maximal attractive forces measured for the two types of junctions were found to differ significantly. We show that the previously reported values of the contact conductance correspond to the junction being under maximal tensile stress.
Recent I/V curve measurements suggest that C60 molecules deposited in gold nanojunctions change their adsorption configuration when a finite voltage in a 2-terminal setting is applied. This is of interest for molecular electronics because a robust molecular transistor could be based on such junctions if the mechanism of the process is understood. We present density functional theory based plane wave calculations, where we studied the energetics of the molecules adsorption under the influence of an external field. Particular emphasis was placed on investigating a possible lightning rod effect which might explain the switching between configurations found in the experiments. We also analyze our results for the adsorption energetics in terms of an electrostatic expression for the total energy, where the dependence of the polarizability of thejunction on the position of the C60 molecule was identified as a crucialproperty for the field induced change of adsorption site.
Integrating epitaxial and ferromagnetic Europium Oxide (EuO) directly on silicon is a perfect route to enrich silicon nanotechnology with spin filter functionality. To date, the inherent chemical reactivity between EuO and Si has prevented a heteroepitaxial integration without significant contaminations of the interface with Eu silicides and Si oxides. We present a solution to this long-standing problem by applying two complementary passivation techniques for the reactive EuO/Si interface: ($i$) an $in:situ$ hydrogen-Si $(001)$ passivation and ($ii$) the application of oxygen-protective Eu monolayers --- without using any additional buffer layers. By careful chemical depth profiling of the oxide-semiconductor interface via hard x-ray photoemission spectroscopy, we show how to systematically minimize both Eu silicide and Si oxide formation to the sub-monolayer regime --- and how to ultimately interface-engineer chemically clean, heteroepitaxial and ferromagnetic EuO/Si $(001)$ in order to create a strong spin filter contact to silicon.
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as low-temperature AFM tunnel junctions that operate as spin-valves, or room-temperature AFM memory, for which either thermal heating in combination with magnetic fields, or Neel spin-orbit torque is used for the information writing process. On the other hand, piezoelectric materials were employed to control magnetism by electric fields in multiferroic heterostructures, which suppresses Joule heating caused by switching currents and may enable low energy-consuming electronic devices. Here, we combine the two material classes to explore changes of the resistance of the high-Neel-temperature antiferromagnet MnPt induced by piezoelectric strain. We find two non-volatile resistance states at room temperature and zero electric field, which are stable in magnetic fields up to 60 T. Furthermore, the strain-induced resistance switching process is insensitive to magnetic fields. Integration in a tunnel junction can further amplify the electroresistance. The tunneling anisotropic magnetoresistance reaches ~11.2% at room temperature. Overall, we demonstrate a piezoelectric, strain-controlled AFM memory which is fully operational in strong magnetic fields and has potential for low-energy and high-density memory applications.
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