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Register a new userFull oxide heterostructure combining a high-Tc diluted ferromagnet with a high-mobility conductor
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We report on the growth of heterostructures composed of layers of the high-Curie temperature ferromagnet Co-doped (La,Sr)TiO3 (Co-LSTO) with high-mobility SrTiO3 (STO) substrates processed at low oxygen pressure. While perpendicular spin-dependent transport measurements in STO//Co-LSTO/LAO/Co tunnel junctions demonstrate the existence of a large spin polarization in Co-LSTO, planar magnetotransport experiments on STO//Co-LSTO samples evidence electronic mobilities as high as 10000 cm2/Vs at T = 10 K. At high enough applied fields and low enough temperatures (H < 60 kOe, T < 4 K) Shubnikov-de Haas oscillations are also observed. We present an extensive analysis of these quantum oscillations and relate them with the electronic properties of STO, for which we find large scattering rates up to ~ 10 ps. Thus, this work opens up the possibility to inject a spin-polarized current from a high-Curie temperature diluted oxide into an isostructural system with high-mobility and a large spin diffusion length.
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Here we report the synthesis of a bulk oxide diluted magnetic semiconductor (DMS) system La1-xSrxCu0.925Mn0.075SO (x=0, 0.025, 0.05, 0.075, and 0.1). As a wide band gap p-type oxide semiconductor, LaCuSO satisfies all the conditions forecasted theoretically to be a room temperature DMS. The Curie temperature (TC) is around 200K as x>0.05, which is among the highest TC record of known bulk DMS materials up to now. The system provides a rare example of oxide DMS system with p-type conduction, which is important for formation of high temperature spintronic devices.
Wurtzite GaN:Mn films on sapphire substrates were successfully grown by use of the molecular beam epitaxy (MBE) system. The film has an extremely high Curie temperature of around 940 K, although the Mn concentration is only about 3 ~ 5 %. Magnetization measurements were carried out in magnetic fields parallel to the film surface up to 7 T. The magnetization process shows the coexistence of ferromagnetic and paramagnetic contributions at low temperatures, while the typical ferromagnetic magnetization process is mainly observed at high temperatures because of the decrease of the paramagnetic contributions. The observed transport characteristics show a close relation between the magnetism and the impurity conduction. The double exchange mechanism of the Mn-impurity band is one of the possible models for the high-TC ferromagnetism in GaN:Mn.
We have examined whether the Co ions crystallographically substitute on the Ti sites in rutile and anatase Ti_{1-x}$Co$_{x}$O$_{2-delta}$ thin films that exhibit room-temperature ferromagnetism. Intensities of the x-ray Bragg reflection from the films were measured around the $K$-absorption-edge of Co. If the Co ions randomly substitute on the Ti sites, the intensity should exhibit an anomaly due to the anomalous dispersion of the atomic scattering factor of Co. However, none of the anatase and rutile samples did exhibit an anomaly, unambiguously showing that the Co ions in Ti$_{1-x}$Co$_{x}$O$_{2-delta}$ are not exactly located at the Ti sites of TiO$_2$. The absence of the anomaly is probably caused by a significant deformation of the local structure around Co due to the oxygen vacancy. We have applied the same method to paramagnetic Zn$_{1-x}$Co$_{x}$O thin films and obtained direct evidence that the Co ions are indeed substituted on the Zn sites.
We report on tunneling magnetoresistance (TMR) experiments that demonstrate the existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d (Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curie temperature. These TMR experiments have been performed on magnetic tunnel junctions associating Co-LSTO and Co electrodes. Extensive structural analysis of Co-LSTO combining high-resolution transmission electron microscopy and Auger electron spectroscopy excluded the presence of Co clusters in the Co-LSTO layer and thus, the measured ferromagnetism and high spin polarization are intrinsic properties of this DMOS. Our results argue for the DMOS approach with complex oxide materials in spintronics.
In the pseudogap state of the high-Tc copper-oxide (cuprate) superconductors, angle-resolved photoemission (ARPES) measurements have seen an Fermi arc, i.e., an open-ended gapless section in the large Fermi surface, rather than a closed loop expected of an ordinary metal. This is all the more puzzling because Fermi pockets (small closed Fermi surface features) have been suggested from recent quantum oscillation measurements. The Fermi arcs have worried the high-Tc community for many years because they cannot be understood in terms of existing theories. Theorists came up with a way out in the form of conventional Fermi surface pockets associated with competing order, with a back side that is for detailed reasons invisible by photoemission. Here we report ARPES measurements of La-Bi2201 that give direct evidence of the Fermi pocket. The charge carriers in the pocket are holes and the pockets show an unusual dependence upon doping, namely, they exist in underdoped but not overdoped samples. A big surprise is that these Fermi pockets appear to coexist with the Fermi arcs. This coexistence has not been expected theoretically and the understanding of the mysterious pseudogap state in the high-Tc cuprate superconductors will rely critically on understanding such a new finding.
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