No Arabic abstract
The voltage probe model is a model of incoherent scattering in quantum transport. Here we use this model to study the effect of spin-flip scattering on electrical conduction through a quantum dot with chaotic dynamics. The spin decay rate gamma is quantified by the correlation of spin-up and spin-down current fluctuations (spin-flip noise). The resulting decoherence reduces the ability of the quantum dot to produce spin-entangled electron-hole pairs. For gamma greater than a critical value gamma_c, the entanglement production rate vanishes identically. The statistical distribution P(gamma_c) of the critical decay rate in an ensemble of chaotic quantum dots is calculated using the methods of random-matrix theory. For small gamma_c this distribution is proportional to gamma_c^(-1+beta/2), depending on the presence (beta=1) or absence (beta=2) of time-reversal symmetry. To make contact with experimental observables, we derive a one-to-one relationship between the entanglement production rate and the spin-resolved shot noise, under the assumption that the density matrix is isotropic in the spin degrees of freedom. Unlike the Bell inequality, this relationship holds for both pure and mixed states. In the tunneling regime, the electron-hole pairs are entangled if and only if the correlator of parallel spin currents is at least twice larger than the correlator of antiparallel spin currents.
When current flows through a magnetic tunnel junction (MTJ), there is spin accumulation at the electrode-barrier interfaces if the magnetic moments of the two ferromagnetic electrodes are not aligned. Here we report that such nonequilibrium spin accumulation generates its own characteristic low frequency noise (LFN). Past work viewed the LFN in MTJs as an equilibrium effect arising from resistance fluctuations ($S_R$) which a passively applied current ($I$) converts to measurable voltage fluctuations ($S_{V}=I^{2}S_{R}$). We treat the LFN associated with spin accumulation as a nonequilibrium effect, and find that the noise power can be fitted in terms of the spin-polarized current by $S_{I}f=aIcoth(frac{I}{b})-ab$, resembling the form of the shot noise for a tunnel junction, but with current now taking the role of the bias voltage, and spin-flip probability taking the role of tunneling probability.
We report shot noise measurements for a quantum dot formed in an InAs nanowire suspended between superconducting electrodes. We find a clear alternation for the shot noise value in the Coulomb blockade regime between even and odd electron occupation in the dot, indicating that super-Poissonian (Poissonian) shot noise with the Fano factor reaching around 2 (1) occurs for even (odd) parity. With increasing magnetic field, the parity effect disappears and all the regimes show the Fano factor of around 1. The whole observation in our experiments quantitatively agrees with simulation obtained from full-counting statistics of cotunneling including spin-flip relaxation process, which corresponds to modelling electron motion in a quantum dot with strong spin-orbit interaction.
In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a reduction can be undone if the spin-orbit coupling parameters acquire a spatial dependence, which can be achieved, e.g., by a metal gate covering only a part of the quantum dot. We calculate the effect of such spatially non-uniform spin-orbit scattering on the weak localization correction and the universal conductance fluctuations of a chaotic quantum dot coupled to electron reservoirs by ballistic point contacts, in the presence of a magnetic field parallel to the plane of the quantum dot.
We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The current flowing through the system is determined within the perturbation theory in the hopping between the dots, whereas the spectrum of a quantum dot-ferromagnetic lead subsystem is determined by means of the numerical renormalization group method. The spin-dependent charge fluctuations between ferromagnets and quantum dots generate an effective exchange field, which splits the double dot levels. Such field can be controlled, separately for each quantum dot, by the gate voltages or by changing the magnetic configuration of external leads. We demonstrate that the considered double quantum dot spin valve setup exhibits enhanced magnetoresistive properties, including both normal and inverse tunnel magnetoresistance. We also show that this system allows for the generation of highly spin-polarized currents, which can be controlled by purely electrical means. The considered double quantum dot with ferromagnetic contacts can thus serve as an efficient voltage-tunable spin valve characterized by high output parameters.
We calculate current, spin current and tunnel magnetoresistance (TMR) for a quantum dot coupled to ferromagnetic leads in the presence of a square wave of bias voltage. Our results are obtained via time-dependent nonequilibrium Green function. Both parallel and antiparallel lead magnetization alignments are considered. The main findings include a wave of spin accumulation and spin current that can change sign as the time evolves, spikes in the TMR signal and a TMR sign change due to an ultrafast switch from forward to reverse current in the emitter lead.