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Register a new userWeak localization and conductance fluctuations of a chaotic quantum dot with tunable spin-orbit coupling
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In a two-dimensional quantum dot in a GaAs heterostructure, the spin-orbit scattering rate is substantially reduced below the rate in a bulk two-dimensional electron gas [B.I. Halperin et al, Phys. Rev. Lett. 86, 2106 (2001)]. Such a reduction can be undone if the spin-orbit coupling parameters acquire a spatial dependence, which can be achieved, e.g., by a metal gate covering only a part of the quantum dot. We calculate the effect of such spatially non-uniform spin-orbit scattering on the weak localization correction and the universal conductance fluctuations of a chaotic quantum dot coupled to electron reservoirs by ballistic point contacts, in the presence of a magnetic field parallel to the plane of the quantum dot.
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We investigated the magnetotransport properties of mesoscopic platinum nanostructures (wires and rings) with sub-100 nm lateral dimensions at very low temperatures. Despite the strong spin-orbit interaction in platinum, oscillations of the conductance as a function of the external magnetic field due to quantum interference effects was found to appear. The oscillation was decomposed into Aharonov-Bohm periodic oscillations and aperiodic fluctuations of the conductance due to a magnetic flux piercing the loop of the ring and the metal wires forming the nanostructures, respectively. We also investigated the magnetotransport under different bias currents to explore the interplay between electron phase coherence and spin accumulation effects in strong spin-orbit conductors.
We study the impacts of the magnetic field direction on the spin-manipulation and the spin-relaxation in a one-dimensional quantum dot with strong spin-orbit coupling. The energy spectrum and the corresponding eigenfunctions in the quantum dot are obtained exactly. We find that no matter how large the spin-orbit coupling is, the electric-dipole spin transition rate as a function of the magnetic field direction always has a $pi$ periodicity. However, the phonon-induced spin relaxation rate as a function of the magnetic field direction has a $pi$ periodicity only in the weak spin-orbit coupling regime, and the periodicity is prolonged to $2pi$ in the strong spin-orbit coupling regime.
We present an approach for entangling electron spin qubits localized on spatially separated impurity atoms or quantum dots via a multi-electron, two-level quantum dot. The effective exchange interaction mediated by the dot can be understood as the simplest manifestation of Ruderman-Kittel-Kasuya-Yosida exchange, and can be manipulated through gate voltage control of level splittings and tunneling amplitudes within the system. This provides both a high degree of tuneability and a means for realizing high-fidelity two-qubit gates between spatially separated spins, yielding an experimentally accessible method of coupling donor electron spins in silicon via a hybrid impurity-dot system.
We study the electric-dipole transitions for a single electron in a double quantum dot located in a semiconductor nanowire. Enabled by spin-orbit coupling (SOC), electric-dipole spin resonance (EDSR) for such an electron can be generated via two mechanisms: the SOC-induced intradot pseudospin states mixing and the interdot spin-flipped tunneling. The EDSR frequency and strength are determined by these mechanisms together. For both mechanisms the electric-dipole transition rates are strongly dependent on the external magnetic field. Their competition can be revealed by increasing the magnetic field and/or the interdot distance for the double dot. To clarify whether the strong SOC significantly impact the electron state coherence, we also calculate relaxations from excited levels via phonon emission. We show that spin-flip relaxations can be effectively suppressed by the phonon bottleneck effect even at relatively low magnetic fields because of the very large $g$-factor of strong SOC materials such as InSb.
We discuss a general framework to address spin decoherence resulting from fluctuations in a spin Hamiltonian. We performed a systematic study on spin decoherence in the compound K$_6$[V$_{15}$As$_6$O$_{42}$(D$_2$O)] $cdot$ 8D$_2$O, using high-field Electron Spin Resonance (ESR). By analyzing the anisotropy of resonance linewidths as a function of orientation, temperature and field, we find that the spin-orbit term is a major decoherence source. The demonstrated mechanism can alter the lifetime of any spin qubit and we discuss how to mitigate it by sample design and field orientation.
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