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Register a new userUniversal features of electron-phonon interactions in atomic wires
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Added by
Alfredo Levy Yeyati
Publication date
2005
fields
Physics
and research's language is
English
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The effect of electron-phonon interactions in the conductance through metallic atomic wires is theoretically analyzed. The proposed model allows to consider an atomic size region electrically and mechanically coupled to bulk electrodes. We show that under rather general conditions the features due to electron-phonon coupling are described by universal functions of the system transmission coefficients. It is predicted that the reduction of the conductance due to electron-phonon coupling which is observed close to perfect transmission should evolve into an enhancement at low transmission. This crossover can be understood in a transparent way as arising from the competition between elastic and inelastic processes.
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We report strong electron-electron interactions in quantum wires etched from an InAs quantum well, a material known to have strong spin-orbit interactions. We find that the current through the wires as a function of the bias voltage and temperature follows the universal scaling behavior of a Tomonaga--Luttinger liquid. Using a universal scaling formula, we extract the interaction parameter and find strong electron-electron interactions, increasing as the wires become more depleted. We establish theoretically that spin-orbit interactions cause only minor modifications of the interaction parameter in this regime, indicating that genuinely strong electron-electron interactions are indeed achieved in the device. Our results suggest that etched InAs wires provide a platform with both strong electron-electron and strong spin-orbit interactions.
The efficiency of optical emitters can be dramatically enhanced by reducing the effective mode volume (the Purcell effect). Here we predict an analogous enhancement for electron-phonon (el-ph) scattering, achieved by compressing the electronic Wannier orbitals. Reshaping of Wannier orbitals is a prominent effect in graphene moire superlattices (SLs) where the orbitals are tunable by the twist angle. A reduction of the orbital effective volume leads to an enhancement in the effective el-ph coupling strength, yielding the values considerably bigger than those known for pristine monolayer graphene. The enhanced coupling boosts the el-ph scattering rates, pushing them above the values predicted from the enhanced spectral density of electronic excitations. The enhanced phonon emission and scattering rates are manifest in the observables such as electron-lattice cooling and the linear-$T$ resistivity, both of which are directly tunable by the moire twist angle.
Non-equilibrium Greens functions calculations based on density functional theory show a direct link between the initial stages of H$_2$ dissociation on a gold atomic wire and the electronic current supported by the gold wire. The simulations reveal that for biases below the stability threshold of the wire, the minimum-energy path for H$_2$ dissociation is not affected. However, the electronic current presents a dramatic drop when the molecule initiates its dissociation. This current drop is traced back to quantum interference between electron paths when the molecule starts interacting with the gold wire.
The acoustic phonon-mediated drag-contribution to the drag current created in the ballistic transport regime in a one-dimensional nanowire by phonons generated by a current-carrying ballistic channel in a nearby nanowire is calculated. The threshold of the phonon-mediated drag current with respect to bias or gate voltage is predicted.
Bilayers of graphitic materials have potential applications in field effect transistors (FETs). A potential difference applied between certain ionic bilayers made from insulating graphitic materials such as BN, ZnO and AlN could reduce gap sizes, turning them into useful semiconductors. On the other hand, opening of a small semiconducting gap occurs in graphene bilayers under applied field. The aim here is to investigate to what extent substrate induced electron-phonon interactions (EPIs) modify this gap change. We examine EPIs in several lattice configurations, using a perturbative approach. The typical effect of EPIs on the ionic bilayers is an undesirable gap widening. The size of this gap change varies considerably with lattice structure and the magnitude of the bias. When bias is larger than the non-interacting gap size, EPIs have the smallest effect on the bandgap, especially in configurations with $AA^{prime}$ and $AB$ structures. Thus careful selection of substrate, lattice configuration and bias strength to minimise the effects of EPIs could be important for optimising the properties of electronic devices. We use parameters related to BN in this article. In practice, the results presented here are broadly applicable to other graphitic bilayers, and are likely to be qualitatively similar in metal dichalcogenide bilayers such as MoS$_2$, which are already of high interest for their use in FETs.
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