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Register a new userStrong Electron-Electron Interactions of a Tomonaga--Luttinger Liquid Observed in InAs Quantum Wires
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We report strong electron-electron interactions in quantum wires etched from an InAs quantum well, a material known to have strong spin-orbit interactions. We find that the current through the wires as a function of the bias voltage and temperature follows the universal scaling behavior of a Tomonaga--Luttinger liquid. Using a universal scaling formula, we extract the interaction parameter and find strong electron-electron interactions, increasing as the wires become more depleted. We establish theoretically that spin-orbit interactions cause only minor modifications of the interaction parameter in this regime, indicating that genuinely strong electron-electron interactions are indeed achieved in the device. Our results suggest that etched InAs wires provide a platform with both strong electron-electron and strong spin-orbit interactions.
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The Tomonaga-Luttinger liquid (TLL) concept is believed to generically describe the strongly-correlated physics of one-dimensional systems at low temperatures. A hallmark signature in 1D conductors is the quantum phase transition between metallic and insulating states induced by a single impurity. However, this transition impedes experimental explorations of real-world TLLs. Furthermore, its theoretical treatment, explaining the universal energy rescaling of the conductance at low temperatures, has so far been achieved exactly only for specific interaction strengths. Quantum simulation can provide a powerful workaround. Here, a hybrid metal-semiconductor dissipative quantum circuit is shown to implement the analogue of a TLL of adjustable electronic interactions comprising a single, fully tunable scattering impurity. Measurements reveal the renormalization group `beta-function for the conductance that completely determines the TLL universal crossover to an insulating state upon cooling. Moreover, the characteristic scaling energy locating at a given temperature the position within this conductance renormalization flow is established over nine decades versus circuit parameters, and the out-of-equilibrium regime is explored. With the quantum simulator quality demonstrated from the precise parameter-free validation of existing and novel TLL predictions, quantum simulation is achieved in a strong sense, by elucidating interaction regimes which resist theoretical solutions.
We have measured the temperature dependence of the conductance in long V-groove quantum wires (QWRs) fabricated in GaAs/AlGaAs heterostructures. Our data is consistent with recent theories developed within the framework of the Luttinger liquid model, in the limit of weakly disordered wires. We show that for the relatively small amount of disorder in our QWRs, the value of the interaction parameter g is g=0.66, which is the expected value for GaAs. However, samples with a higher level of disorder show conductance with stronger temperature dependence, which does not allow their treatment in the framework of perturbation theory. Trying to fit such data with perturbation-theory models leads inevitably to wrong (lower) values of g.
Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy spectrum and tunneling to states outside the dot. The situation is even more complicated for silicon dots, due to the interplay between valley, orbital, and interaction energy scales. Here, we study two-electron wavefunctions in electrostatically confined quantum dots formed in a SiGe/Si/SiGe quantum well at zero magnetic field, using a combination of tight-binding and full-configuration-interaction (FCI) methods, and taking into account atomic-scale disorder at the quantum well interface. We model dots based on recent qubit experiments, which straddle the boundary between strongly interacting and weakly interacting systems, and display a rich and diverse range of behaviors. Our calculations show that strong electron-electron interactions, induced by weak confinement, can significantly suppress the low-lying, singlet-triplet (ST) excitation energy. However, when the valley-orbit interactions caused by interfacial disorder are weak, the ST splitting can approach its noninteracting value, even when the electron-electron interactions are strong and Wigner-molecule behavior is observed. These results have important implications for the rational design and fabrication of quantum dot qubits with predictable properties.
There have been conflicting reports on the electronic properties of twin domain boundaries (DBs) in MoSe2 monolayer, including the quantum well states, charge density wave, and Tomonaga-Luttinger liquid (TLL). Here we employ low-temperature scanning tunneling spectroscopy to reveal both the quantum confinement effect and signatures of TLL in the one-dimensional DBs. The data do not support the CDW at temperatures down to ~5 K.
The existence of long-lived non-equilibrium states without showing thermalization, which has previously been demonstrated in time evolution of ultracold atoms, suggests the possibility of their spatial analogue in transport behavior of interacting electrons in solid-state systems. Here we report long-lived non-equilibrium states in one-dimensional edge channels in the integer quantum Hall regime. An indirect heating scheme in a counterpropagating configuration is employed to generate a non-trivial binary spectrum consisting of high- and low-temperature components. This unusual spectrum is sustained even after travelling 5 - 10 {mu}m, much longer than the length for electronic relaxation (about 0.1 {mu}m), without showing significant thermalization. This observation is consistent with the integrable model of Tomonaga-Luttinger liquid. The long-lived spectrum implies that the system is well described by non-interacting plasmons, which are attractive for carrying information for a long distance.
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