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Phonon drag in ballistic quantum wires

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 Added by M. I. Muradov
 Publication date 2001
  fields Physics
and research's language is English
 Authors M. I. Muradov




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The acoustic phonon-mediated drag-contribution to the drag current created in the ballistic transport regime in a one-dimensional nanowire by phonons generated by a current-carrying ballistic channel in a nearby nanowire is calculated. The threshold of the phonon-mediated drag current with respect to bias or gate voltage is predicted.



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Valley Hall effect is an appearance of the valley current in the direction transverse to the electric current. We develop the microscopic theory of the valley Hall effect in two-dimensional semiconductors where the electrons are dragged by the phonons or photons. We derive and analyze all relevant contributions to the valley current including the skew-scattering effects together with the anomalous contributions caused by the side-jumps and the anomalous velocity. The partial compensation of the anomalous contributions is studied in detail. The role of two-phonon and two-impurity scattering processes is analyzed. We also compare the valley Hall effect under the drag conditions and the valley Hall effect caused by the external static electric field.
Electron interactions in and between wires become increasingly complex and important as circuits are scaled to nanometre sizes, or employ reduced-dimensional conductors like carbon nanotubes, nanowires and gated high mobility 2D electron systems. This is because the screening of the long-range Coulomb potential of individual carriers is weakened in these systems, which can lead to phenomenon such as Coulomb drag: a current in one wire induces a voltage in a second wire through Coulomb interactions alone. Previous experiments have observed electron drag in wires separated by a soft electrostatic barrier $gtrsim$ 80 nm. Here, we measure both positive and negative drag between adjacent vertical quantum wires that are separated by $sim$ 15 nm and have independent contacts, which allows their electron densities to be tuned independently. We map out the drag signal versus the number of electron subbands occupied in each wire, and interpret the results in terms of momentum-transfer and charge-fluctuation induced transport models. For wires of significantly different subband occupancies, the positive drag effect can be as large as 25%.
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