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Register a new userLocal transport in a disorder-stabilized correlated insulating phase
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We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating phase is characterized by a universal hopping transport mechanism. Transport in this regime is determined only by the average electron separation, independent of the topology of background disorder. We have discussed this observation in terms of a pinned electron solid ground state, stabilized by mutual interplay of disorder and Coulomb interaction.
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We report on angle-dependent measurements of the sheet resistances and Hall coefficients of electron liquids in SmTiO3/SrTiO3/SmTiO3 quantum well structures, which were grown by molecular beam epitaxy on (001) DyScO3. We compare their transport properties with those of similar structures grown on LSAT [(La0.3Sr0.7)(Al0.65Ta0.35)O3]. On DyScO3, planar defects normal to the quantum wells lead to a strong in-plane anisotropy in the transport properties. This allows for quantifying the role of defects in transport. In particular, we investigate differences in the longitudinal and Hall scattering rates, which is a non-Fermi liquid phenomenon known as lifetime separation. The residuals in both the longitudinal resistance and Hall angle were found to depend on the relative orientations of the transport direction to the planar defects. The Hall angle exhibited a robust T2 temperature dependence along all directions, whereas no simple power law could describe the temperature dependence of the longitudinal resistances. Remarkably, the degree of the carrier lifetime separation, as manifested in the distinctly different temperature dependences and diverging residuals near a critical quantum well thickness, was completely insensitive to disorder. The results allow for a clear distinction between disorder-induced contributions to the transport and intrinsic, non-Fermi liquid phenomena, which includes the lifetime separation.
Recent transport experiments in spatially modulated quasi-1D structures created on top of LaAlO$_3$/SrTiO$_3$ interfaces have revealed some interesting features, including phenomena conspicuously absent without the modulation. In this work, we focus on two of these remarkable features and provide theoretical analysis allowing their interpretation. The first one is the appearance of two-terminal conductance plateaus at rational fractions of $e^2/h$. We explain how this phenomenon, previously believed to be possible only in systems with strong repulsive interactions, can be stabilized in a system with attraction in the presence of the modulation. Using our theoretical framework we find the plateau amplitude and shape, and characterize the correlated phase which develops in the system due to the partial gap, namely a Luttinger liquid of electronic trions. The second observation is a sharp conductance dip below a conductance of $1times e^2/h$, which changes its value over a wide range when tuning the system. We theorize that it is due to resonant backscattering caused by a periodic spin-orbit field. The behavior of this dip can be reliably accounted for by considering the finite length of the electronic waveguides, as well as the interactions therein. The phenomena discussed in this work exemplify the intricate interplay of strong interactions and spatial modulations, and reveal the potential for novel strongly correlated phases of matter in systems which prominently feature both.
We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak magnetoresistance oscillations are observed, which indicate short-range ordering of the potential landscape formed by the charged dots and the strain fields. The presence of these oscillations coincides with the observation of a metal-insulator transition, and a maximum in the electron mobility as a function of the electron density. Within a model based on correlated disorder, we establish a relation between these effects.
We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to 20,000 at 260mK. Within the band gap, the conductance decreases exponentially by 3 orders of magnitude with increasing electric field, and can be accounted for by variable range hopping with a gate-tunable density of states, effective mass, and localization length. At large B, we observe quantum Hall conductance with fractional values, which arise from equilibration of edge states between differentially-doped regions, and the presence of an insulating state at filling factor { u}=0. Our work underscores the importance of bilayer graphene for both fundamental interest and technological applications.
Moire superlattices of van der Waals materials, such as twisted graphene and transitional metal dichalcogenides, have recently emerged as a fascinating platform to study strongly correlated states in two dimensions, thanks to the strong electron interaction in the moire minibands. In most systems, the correlated states appear when the moire lattice is filled by integer number of electrons per moire unit cell. Recently, correlated states at fractional fillings of 1/3 and 2/3 holes per moire unit cell has been reported in the WS2/WSe2 heterobilayer, hinting the long range nature of the electron interaction. In this work, employing a scanning microwave impedance microscopy technique that is sensitive to local electrical properties, we observe a series of correlated insulating states at fractional fillings of the moire minibands on both electron- and hole-doped sides in angle-aligned WS2/WSe2 hetero-bilayers, with certain states persisting at temperatures up to 120 K. Monte Carlo simulations reveal that these insulating states correspond to ordering of electrons in the moire lattice with a periodicity much larger than the moire unit cell, indicating a surprisingly strong and long-range interaction beyond the nearest neighbors. Our findings usher in unprecedented opportunities in the study of strongly correlated states in two dimensions.
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