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Register a new userTransport signatures of correlated disorder in a two-dimensional electron gas
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We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak magnetoresistance oscillations are observed, which indicate short-range ordering of the potential landscape formed by the charged dots and the strain fields. The presence of these oscillations coincides with the observation of a metal-insulator transition, and a maximum in the electron mobility as a function of the electron density. Within a model based on correlated disorder, we establish a relation between these effects.
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We report on angle-dependent measurements of the sheet resistances and Hall coefficients of electron liquids in SmTiO3/SrTiO3/SmTiO3 quantum well structures, which were grown by molecular beam epitaxy on (001) DyScO3. We compare their transport properties with those of similar structures grown on LSAT [(La0.3Sr0.7)(Al0.65Ta0.35)O3]. On DyScO3, planar defects normal to the quantum wells lead to a strong in-plane anisotropy in the transport properties. This allows for quantifying the role of defects in transport. In particular, we investigate differences in the longitudinal and Hall scattering rates, which is a non-Fermi liquid phenomenon known as lifetime separation. The residuals in both the longitudinal resistance and Hall angle were found to depend on the relative orientations of the transport direction to the planar defects. The Hall angle exhibited a robust T2 temperature dependence along all directions, whereas no simple power law could describe the temperature dependence of the longitudinal resistances. Remarkably, the degree of the carrier lifetime separation, as manifested in the distinctly different temperature dependences and diverging residuals near a critical quantum well thickness, was completely insensitive to disorder. The results allow for a clear distinction between disorder-induced contributions to the transport and intrinsic, non-Fermi liquid phenomena, which includes the lifetime separation.
Recent transport experiments in spatially modulated quasi-1D structures created on top of LaAlO$_3$/SrTiO$_3$ interfaces have revealed some interesting features, including phenomena conspicuously absent without the modulation. In this work, we focus on two of these remarkable features and provide theoretical analysis allowing their interpretation. The first one is the appearance of two-terminal conductance plateaus at rational fractions of $e^2/h$. We explain how this phenomenon, previously believed to be possible only in systems with strong repulsive interactions, can be stabilized in a system with attraction in the presence of the modulation. Using our theoretical framework we find the plateau amplitude and shape, and characterize the correlated phase which develops in the system due to the partial gap, namely a Luttinger liquid of electronic trions. The second observation is a sharp conductance dip below a conductance of $1times e^2/h$, which changes its value over a wide range when tuning the system. We theorize that it is due to resonant backscattering caused by a periodic spin-orbit field. The behavior of this dip can be reliably accounted for by considering the finite length of the electronic waveguides, as well as the interactions therein. The phenomena discussed in this work exemplify the intricate interplay of strong interactions and spatial modulations, and reveal the potential for novel strongly correlated phases of matter in systems which prominently feature both.
The transport equations for a two-dimensional electron gas with spin-orbit interaction are presented. The distribution function is a 2x2-matrix in the spin space. Particle and energy conservation laws determine the expressions for the electric current and the energy flow. The derived transport equations are applied to the spin-splitting of a wave packed and to the calculation of the structure factor and the dynamic conductivity.
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beams injection energy, and distance from the injection point. At low injection energies, we find electrons in the beam scatter by small-angles, as has been previously observed. At high injection energies, we find a surprising result: placing the SGM tip where it back-scatters electrons increases the differential conductance through the system. This effect is explained by a non-equilibrium distribution of electrons in a localized region of 2DEG near the injection point. Our data indicate that the spatial extent of this highly non-equilibrium distribution is within ~1 micrometer of the injection point. We approximate the non-equilibrium region as having an effective temperature that depends linearly upon injection energy.
Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape in a GaAs/AlGaAs two-dimensional electron gas, thereby enabling the formation of a periodic QDL. The current-voltage characteristics, I(V), follow a power law, as expected for a QDL. In addition, a systematic study of the scaling behavior of I(V) allows us to probe the effects of background disorder on transport through the QDL. Our results are particularly important for semiconductor-based QDL architectures which aim to probe collective phenomena.
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