A novel approach has been developed to calculate the temperature dependence of the optical response of a semiconductor. The dielectric function is averaged over several thermally perturbed configurations that are extracted from molecular dynamic simulations. The calculated temperature dependence of the imaginary part of the dielectric function of GaAs is presented in the range from 0 to 700 K. This approach that explicitly takes into account lattice vibrations describes well the observed thermally-induced energy shifts and broadening of the dielectric function.
A topological phase transition from a trivial insulator to a $mathbb{Z}_2$ topological insulator requires the bulk band gap to vanish. In the case of noncentrosymmetric materials, these phases are separated by a gapless Weyl semimetal phase. However, at finite temperature, the gap is affected by atomic motion, through electron-phonon interaction, and by thermal expansion of the lattice. As a consequence, the phase space of topologically nontrivial phases is affected by temperature. In this paper, the pressure and temperature dependence of the indirect band gap of BiTeI is investigated from first principles. We evaluate the contribution from both electron-phonon interaction and thermal expansion, and show that their combined effect drives the topological phase transition towards higher pressures with increasing temperature. Notably, we find that the sensitivity of both band extrema to pressure and topology for electron-phonon interaction differs significantly according to their leading orbital character. Our results indicate that the Weyl semimetal phase width is increased by temperature, having almost doubled by 100 K when compared to the static lattice results. Our findings thus provide a guideline for experimental detection of the nontrivial phases of BiTeI and illustrate how the phase space of the Weyl semimetal phase in noncentrosymmetric materials can be significantly affected by temperature.
Based on ab initio software packages using nonorthogonal localized orbitals, we develop a general scheme of calculating response functions. We test the performance of this method by calculating nonlinear optical responses of materials, like the shift current conductivity of monolayer WS2, and achieve good agreement with previous calculations. This method bears many similarities to Wannier interpolation, which requires a challenging optimization of Wannier functions due to the conflicting requirements of orthogonality and localization. Although computationally heavier compared to Wannier interpolation, our procedure avoids the construction of Wannier functions and thus enables automated high throughput calculations of linear and nonlinear responses related to electrical, magnetic and optical material properties.
A computational method based on a first-principles multiscale simulation has been used for calculating the optical response and the ablation threshold of an optical material irradiated with an ultrashort intense laser pulse. The method employs Maxwells equations to describe laser pulse propagation and time-dependent density functional theory to describe the generation of conduction band electrons in an optical medium. Optical properties, such as reflectance and absorption, were investigated for laser intensities in the range $10^{10} , mathrm{W/cm^{2}}$ to $2 times 10^{15} , mathrm{W/cm^{2}}$ based on the theory of generation and spatial distribution of the conduction band electrons. The method was applied to investigate the changes in the optical reflectance of $alpha$-quartz bulk, half-wavelength thin-film and quarter-wavelength thin-film and to estimate their ablation thresholds. Despite the adiabatic local density approximation used in calculating the exchange--correlation potential, the reflectance and the ablation threshold obtained from our method agree well with the previous theoretical and experimental results. The method can be applied to estimate the ablation thresholds for optical materials in general. The ablation threshold data can be used to design ultra-broadband high-damage-threshold coating structures.
In this work we present a new method for the calculation of the electrostrictive properties of materials using density functional theory. The method relies on the thermodynamical equivalence, in a dielectric, of the quadratic mechanical responses (stress or strain) to applied electric stimulus (electric or polarisation fields) to the strain or stress dependence of its dielectric susceptibility or stiffness tensors. Comparing with current finite-field methodologies for the calculation of electrostriction, we demonstrate that our presented methodology offers significant advantages of efficiency, robustness, and ease of use. These advantages render tractable the highthroughput theoretical investigation into the largely unknown electrostrictive properties of materials.
The temperature dependence of the electron spin $g$ factor in GaAs is investigated experimentally and theoretically. Experimentally, the $g$ factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins in the temperature range between 4.5 K and 190 K. The experiment shows an almost linear increase of the $g$ value with the temperature. This result is in good agreement with other measurements based on photoluminescence quantum beats and time-resolved Kerr rotation up to room temperature. The experimental data are described theoretically taking into account a diminishing fundamental energy gap in GaAs due to lattice thermal dilatation and nonparabolicity of the conduction band calculated using a five-level kp model. At higher temperatures electrons populate higher Landau levels and the average $g$ factor is obtained from a summation over many levels. A very good description of the experimental data is obtained indicating that the observed increase of the spin $g$ factor with the temperature is predominantly due to bands nonparabolicity.