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We present a cluster algorithm for resistively shunted Josephson junctions and similar physical systems, which dramatically improves sampling efficiency. The algorithm combines local updates in Fourier space with rejection-free cluster updates which exploit the symmetries of the Josephson coupling energy. As an application, we consider the localization transition of a single junction at intermediate Josephson coupling and determine the temperature dependence of the zero bias resistance as a function of dissipation strength.
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Using a new cluster Monte Carlo algorithm, we study the phase diagram and critical properties of an interacting pair of resistively shunted Josephson junctions. This system models tunneling between two electrodes through a small superconducting grain, and is described by a double sine-Gordon model. In accordance with theoretical predictions, we observe three different phases and crossover effects arising from an intermediate coupling fixed point. On the superconductor-to-metal phase boundary, the observed critical behavior is within error-bars the same as in a single junction, with identical values of the critical resistance and a correlation function exponent which depends only on the strength of the Josephson coupling. We explain these critical properties on the basis of a renormalization group (RG) calculation. In addition, we propose an alternative new mean-field theory for this transition, which correctly predicts the location of the phase boundary at intermediate Josephson coupling strength.
Conventional Josephson metal-insulator-metal devices are inherently underdamped and exhibit hysteretic current-voltage response due to a very high subgap resistance compared to that in the normal state. At the same time, overdamped junctions with single-valued characteristics are needed for most superconducting digital applications. The usual way to overcome the hysteretic behavior is to place an external low-resistance normal-metal shunt in parallel with each junction. Unfortunately, such solution results in a considerable complication of the circuitry design and introduces parasitic inductance through the junction. This paper provides a concise overview of some generic approaches that have been proposed in order to realize internal shunting in Josephson heterostructures with a barrier that itself contains the desired resistive component. The main attention is paid to self-shunted devices with local weak-link transmission probabilities so strongly disordered in the interface plane that transmission probabilities are tiny for the main part of the transition region between two superconducting electrodes, while a small part of the interface is well transparent. We consider the possibility of realizing a universal bimodal distribution function and emphasize advantages of such junctions that can be considered as a new class of self-shunted Josephson devices promising for practical applications in superconducting electronics operating at 4.2 K.
We investigated current-voltage characteristics of unshunted and externally shunted Josephson junctions (JJs) with high critical current densities, Jc, in order to extract their basic parameters and statistical characteristics for JJ modeling in superconducting integrated circuits and to assess their potential for future technology nodes. Nb/AlOx-Al/Nb JJs with diameters from 0.5 {mu}m to 6 {mu}m were fabricated using a fully planarized process with Mo or MoNx thin-film shunt resistors with sheet resistance Rsq = 2 {Omega}/sq and Rsq = 6 {Omega}/sq, respectively. We used our standard MIT LL process SFQ5ee to fabricate JJs with Jc = 0.1 mA/{mu}m^2 and our new process SFQ5hs to make JJs with Jc = 0.2 mA/{mu}m^2 and higher current densities up to about 1 mA/{mu}m^2. Using LRC resonance features on the I-V characteristics of shunted JJs, we extract the inductance associated with molybdenum shunt resistors of 1.4 pH/sq. The main part this inductance, about 1.1 pH/sq, is the inductance of the 40-nm Mo resistor film, while the geometrical inductance of superconducting Nb wiring contributes the rest. We attribute this large inductance to kinetic inductance arising from the complex conductivity of a thin normal-metal film in an electromagnetic field with angular frequency {omega}, {sigma}({omega})={sigma}0/(1+i{omega}{tau}), where {sigma}0 is the static conductivity and {tau} the electron scattering time. Using a resonance in a large-area unshunted high-Jc junction excited by a resistively coupled small-area shunted JJ, we extract the Josephson plasma frequency and specific capacitance of high-Jc junctions in 0.1 to 1 mA/{mu}m^2 Jc range. We also present data on Jc targeting and JJ critical current spreads. We discuss using 0.2-mA/{mu}m^2 JJs in VLSI Single Flux Quantum circuits and 0.5-mA/{mu}m^2 JJs in high-density integrated circuits without shunt resistors.
Recent progress in superconductor electronics fabrication has enabled single-flux-quantum (SFQ) digital circuits with close to one million Josephson junctions (JJs) on 1-cm$^2$ chips. Increasing the integration scale further is challenging because of the large area of SFQ logic cells, mainly determined by the area of resistively shunted Nb/AlO$_x$-Al/Nb JJs and geometrical inductors utilizing multiple layers of Nb. To overcome these challenges, we are developing a fabrication process with self-shunted high-J$_c$ JJs and compact thin-film MoN$_x$ kinetic inductors instead of geometrical inductors. We present fabrication details and properties of MoN$_x$ films with a wide range of T$_c$, including residual stress, electrical resistivity, critical current, and magnetic field penetration depth {lambda}$_0$. As kinetic inductors, we implemented Mo$_2$N films with T$_c$ about 8 K, {lambda}$_0$ about 0.51 {mu}m, and inductance adjustable in the range from 2 to 8 pH/sq. We also present data on fabrication and electrical characterization of Nb-based self-shunted JJs with AlO$_x$ tunnel barriers and J$_c$ = 0.6 mA/{mu}m$^2$, and with 10-nm thick Si$_{1-x}$Nb$_x$ barriers, with x from 0.03 to 0.15, fabricated on 200-mm wafers by co-sputtering. We demonstrate that the electron transport mechanism in Si$_{1-x}$Nb$_x$ barriers at x < 0.08 is inelastic resonant tunneling via chains of multiple localized states. At larger x, their Josephson characteristics are strongly dependent on x and residual stress in Nb electrodes, and in general are inferior to AlO$_x$ tunnel barriers.
We are developing a superconductor electronics fabrication process with up to nine planarized superconducting layers, stackable stud vias, self-shunted Nb/AlOx-Al/Nb Josephson junctions, and one layer of MoNx kinetic inductors. The minimum feature size of resistors and inductors in the process is 250 nm. We present data on the mutual inductance of Nb stripline and microstrip inductors with linewidth and spacing from 250 nm to 1 {mu}m made on the same or adjacent Nb layers, as well as the data on the linewidth and resistance uniformity.
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