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Register a new userThermally Assisted Flux Flow in MgB2 : Strong Magnetic Field Dependence of the Activation Energy
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Added by
Anatoli Sidorenko S.
Publication date
2004
fields
Physics
and research's language is
English
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The origin of the resistive transition broadening for MgB2 thin films was investigated. Thermally activated flux flow is found to be responsible for the resistivity contribution in the vicinity of Tc. The origin of the observed extraordinary strong magnetic field dependence of the activation energy of the flux motion is discussed.
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Systematic ac susceptibility measurements have been performed on a MgB$_2$ bulk sample. We demonstrate that the flux creep activation energy is a nonlinear function of the current density $U(j)propto j^{-0.2}$, indicating a nonlogarithmic relaxation of the current density in this material. The dependence of the activation energy on the magnetic field is determined to be a power law $U(B)propto B^{-1.33}$, showing a steep decline in the activation energy with the magnetic field, which accounts for the steep drop in the critical current density with magnetic field that is observed in MgB$_2$. The irreversibility field is also found to be rather low, therefore, the pinning properties of this new material will need to be enhanced for practical applications.
We report the results from resistivity and magnetic measurements on polycrystalline Ce oxypnictide (CeFeAsO1-xFx) samples where x spans from 0.13 to 0.25. We find that the orbital limiting field is as high as 150 T and it systematically decreases with increasing doping. The Maki parameter is greater than one across the phase diagram and the large Maki parameter suggests that orbital and Pauli limiting effects contribute to the upper critical field. The broadening of the superconducting transition in the resistivity data was interpreted using the thermally activated flux flow (TAFF) model where we find that the TAFF activation energy, U0(B), is proportional to B^{-(gamma)} from 1 T to high fields, and (gamma) does not significantly change with doping. However, U0 and the superconducting critical current, Jc, are peaked in the mid-doping region (x = 0.15 to x = 0.20), and not in the low (x < 0.15) or high doping (x > 0.20) regions. Furthermore, U0 is correlated with Jc and follows the two fluid model for granular samples.
We study the temperature dependence of the resistivity as a function of magnetic field in superconducting transition (Tconset - TcR=0) region for different Bi2Sr2CaCu2O8+{delta} superconducting samples being synthesized using sol-gel method. The superconducting transition temperature (TcR=0) of the studied samples is increased from 32 K to 82K by simply increasing the final sintering temperature with an improved grains morphology. On the other hand, broadening of transition is increased substantially with decrease in sintering temperature; this is because Tconset is not affected much with grains morphology. Further broadening of the superconducting transition is seen under magnetic field, which is being explained on the basis of thermally activated flux flow (TAFF) below superconducting transition temperature (Tc). TAFF activation energy (U0) is calculated using the resistive broadening of samples in the presence of magnetic field. Temperature dependence of TAFF activation energy revealed linear temperature dependence for all the samples. Further, magnetic field dependence is found to obey power law for all the samples and the negative exponent is increased with increase in sintering temperature or the improved grains morphology for different Bi-2212 samples. We believe that the sintering temperature and the ensuing role of grain morphology is yet a key issue to be addressed in case of cuprate superconductors.
The microwave power, dc magnetic field, frequency and temperature dependence of the surface resistance of MgB2 films and powder samples were studied. Sample quality is relatively easy to identify by a number of characteristics, the most clear being the breakdown in the omega squared law for poor quality samples. Analysis of the experimental data suggests the most attractive procedure for high quality film growth for technical applications.
We argue that photon counts in a superconducting nanowire single-photon detector (SNSPD) are caused by the transition from a current-biased metastable superconducting state to the normal state. Such a transition is triggered by vortices crossing the thin film superconducting strip from one edge to another due to the Lorentz force. Detector counts in SNSPDs may be caused by three processes: (a) a single incident photon with energy sufficient to break enough Cooper pairs to create a normal-state belt across the entire width of the strip (direct photon count), (b) thermally induced single-vortex crossing in the absence of photons (dark count), which at high bias currents releases the energy sufficient to trigger the transition to the normal state in a belt across the whole width of the strip, and (c) a single incident photon with insufficient energy to create a normal-state belt but initiating a subsequent single-vortex crossing, which provides the rest of the energy needed to create the normal-state belt (vortex-assisted single photon count). We derive the current dependence of the rate of vortex-assisted photon counts. The resulting photon count rate has a plateau at high currents close to the critical current and drops as a power-law with high exponent at lower currents. While the magnetic field perpendicular to the film plane does not affect the formation of hot spots by photons, it causes the rate of vortex crossings (with or without photons) to increase. We show that by applying a magnetic field one may characterize the energy barrier for vortex crossings and identify the origin of dark counts and vortex-assisted photon counts.
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