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Register a new userDependence of the flux creep activation energy on current density and magnetic field for MgB2 superconductor
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Systematic ac susceptibility measurements have been performed on a MgB$_2$ bulk sample. We demonstrate that the flux creep activation energy is a nonlinear function of the current density $U(j)propto j^{-0.2}$, indicating a nonlogarithmic relaxation of the current density in this material. The dependence of the activation energy on the magnetic field is determined to be a power law $U(B)propto B^{-1.33}$, showing a steep decline in the activation energy with the magnetic field, which accounts for the steep drop in the critical current density with magnetic field that is observed in MgB$_2$. The irreversibility field is also found to be rather low, therefore, the pinning properties of this new material will need to be enhanced for practical applications.
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The origin of the resistive transition broadening for MgB2 thin films was investigated. Thermally activated flux flow is found to be responsible for the resistivity contribution in the vicinity of Tc. The origin of the observed extraordinary strong magnetic field dependence of the activation energy of the flux motion is discussed.
We report the results from resistivity and magnetic measurements on polycrystalline Ce oxypnictide (CeFeAsO1-xFx) samples where x spans from 0.13 to 0.25. We find that the orbital limiting field is as high as 150 T and it systematically decreases with increasing doping. The Maki parameter is greater than one across the phase diagram and the large Maki parameter suggests that orbital and Pauli limiting effects contribute to the upper critical field. The broadening of the superconducting transition in the resistivity data was interpreted using the thermally activated flux flow (TAFF) model where we find that the TAFF activation energy, U0(B), is proportional to B^{-(gamma)} from 1 T to high fields, and (gamma) does not significantly change with doping. However, U0 and the superconducting critical current, Jc, are peaked in the mid-doping region (x = 0.15 to x = 0.20), and not in the low (x < 0.15) or high doping (x > 0.20) regions. Furthermore, U0 is correlated with Jc and follows the two fluid model for granular samples.
Doping of MgB2 by nano-SiC and its potential for improvement of flux pinning was studied for MgB2-x(SiC)x/2 with x = 0, 0.2 and 0.3 and a 10wt% nano-SiC doped MgB2 samples. Co-substitution of B by Si and C counterbalanced the effects of single-element doping, decreasing Tc by only 1.5K, introducing pinning centres effective at high fields and temperatures and enhancing Jc and Hirr significantly. Compared to the non-doped sample, Jc for the 10wt% doped sample increased by a factor of 32 at 5K and 8T, 42 at 20K and 5T, and 14 at 30K and 2T. At 20K, which is considered to be a benchmark operating temperature for MgB2, the best Jc for the doped sample was 2.4x10^5A/cm2 at 2T, which is comparable to Jc of the best Ag/Bi-2223 tapes. At 20K and 4T, Jc was 36,000A/cm2, which was twice as high as for the best MgB2 thin films and an order of magnitude higher than for the best Fe/MgB2 tapes. Because of such high performance, it is anticipated that the future MgB2 conductors will be made using the formula of MgBxSiyCz instead of the pure MgB2.
Critical current density (Jc), thermal activation energy (U0), and upper critical field (Hc2) of La1-xSmxO0.5F0.5BiS2 (x = 0.2, 0.8) superconductors are investigated from magnetic field dependent r{ho}(T) studies. The estimated upper critical field (Hc2) has low values of 1.04 T for x = 0.2 and 1.41 T for x = 0.8. These values are lower than Sm free LaO0.5F0.5BiS2 superconductor (1.9 T). The critical current density (Jc) is estimated to be 1.35*105 A/cm2 and 5.07 *105 A/cm2 (2 K) for x = 0.2 and 0.8 respectively, using the Beans model. The thermal activation energy (U0/kB) is 61 K for x = 0.2 and 140 K for x =0.8 as calculated from Arrhenius plots at low magnetic field (1 T) and indicates a strong flux pinning potential which might be co-existing with applied magnetic field.
A strong effect of sample size on magnetic Jc(H) was observed for bulk MgB2 when Jc is obtained directly from the critical state model. Thus obtained zero-field Jc (Jc0) decreases strongly with the sample size, attaining a constant value for the samples larger than a few millimetres. On the other hand, the irreversibility field (Hirr) defined at Jc = 100 A/cm2 increases with the sample size. The decrease of Jc0 is described in terms of voids in the bulk MgB2 samples and superconducting screening around the cells of superconducting material between these voids (35 micro-m), because of concentration of the current in the narrow bridges connecting the cells. For samples larger than a few millimetres, the value of magnetic Jc is in agreement with the transport Jc and it is restricted by the voids. The critical state model is not suitable for obtaining Jc for small bulk MgB2. The increase of Hirr with the sample size is an artefact of defining Hirr by the value of Jc at which an additional superconducting screening on 1mm scale dominates Dm.
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