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Register a new userOrigin of Superconductivity in Boron-doped Diamond
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Superconductivity of boron-doped diamond, reported recently at T_c=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high Tc, leading to very large electron-phonon matrix elements. The calculated coupling strength lambda ~ 0.5 leads to T_c in the 5-10 K range and makes phonon coupling the likely mechanism. Higher doping should increase T_c somewhat, but effects of three dimensionality primarily on the density of states keep doped diamond from having a T_c closer to that of MgB2.
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We consider superconductivity in boron (B) doped diamond using a simplified model for the valence band of diamond. We treat the effects of substitutional disorder of B ions by the coherent potential approximation (CPA) and those of the attractive force between holes by the ladder approximation under the assumption of instantaneous interaction with the Debye cutoff. We thereby calculate the quasiparticle life time, the evolution of the single-particle spectra due to doping, and the effect of disorder on the superconducting critical temperature $T_c$. We in particular compare our results with those for supercell calculations to see the role of disorder, which turns out to be of crucial importance to $T_c$.
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5x10^{21} cm^{-3} and a critical temperature of about 2 K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characterstic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T^{-2}, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature T_c, evidence for an increasing relaxation time on both sides of T_c.
Recent theoretical and experimental studies of hydrogen-rich materials at megabar pressures (i.e., >100 GPa) have led to the discovery of very high-temperature superconductivity in these materials. Lanthanum superhydride LaH$_{10}$ has been of particular focus as the first material to exhibit a superconducting critical temperature (T$_c$) near room temperature. Experiments indicate that the use of ammonia borane as the hydrogen source can increase the conductivity onset temperatures of lanthanum superhydride to as high as 290 K. Here we examine the doping effects of B and N atoms on the superconductivity of LaH$_{10}$ in its fcc (Fm-3m) clathrate structure at megabar pressures. Doping at H atomic positions strengthens the H$_{32}$ cages of the structure to give higher phonon frequencies that enhance the Debye frequency and thus the calculated T$_c$. The predicted T$_c$ can reach 288 K in LaH$_{9.985}$N$_{0.015}$ within the average high-symmetry structure at 240 GPa.
Boron-doped diamond granular thin films are known to exhibit superconductivity with an optimal critical temperature of Tc = 7.2K. Here we report the measured complex surface impedance of Boron-doped diamond films in the microwave frequency range using a resonant technique. Experimentally measured inductance values are in good agreement with estimates obtained from the normal state sheet resistance of the material. The magnetic penetration depth temperature dependence is consistent with that of a fully-gapped s-wave superconductor. Boron-doped diamond films should find application where high kinetic inductance is needed, such as microwave kinetic inductance detectors and quantum impedance devices.
Scanning tunneling spectroscopies are performed below 100~mK on nano-crystalline boron-doped diamond films characterized by Transmission Electron Microscopy and transport measurements. We demonstrate a strong correlation between the local superconductivity strength and the granular structure of the films. The study of the spectral shape, amplitude and temperature dependence of the superconductivity gap enables us to differentiate intrinsically superconducting grains that follow the BCS model, from grains showing a different behavior involving the superconducting proximity effect.
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