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Register a new userSpatially-Correlated Microstructure and Superconductivity in Polycrystalline Boron-Doped Diamond
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Franck Dahlem
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Scanning tunneling spectroscopies are performed below 100~mK on nano-crystalline boron-doped diamond films characterized by Transmission Electron Microscopy and transport measurements. We demonstrate a strong correlation between the local superconductivity strength and the granular structure of the films. The study of the spectral shape, amplitude and temperature dependence of the superconductivity gap enables us to differentiate intrinsically superconducting grains that follow the BCS model, from grains showing a different behavior involving the superconducting proximity effect.
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Superconductivity of boron-doped diamond, reported recently at T_c=4 K, is investigated exploiting its electronic and vibrational analogies to MgB2. The deformation potential of the hole states arising from the C-C bond stretch mode is 60% larger than the corresponding quantity in MgB2 that drives its high Tc, leading to very large electron-phonon matrix elements. The calculated coupling strength lambda ~ 0.5 leads to T_c in the 5-10 K range and makes phonon coupling the likely mechanism. Higher doping should increase T_c somewhat, but effects of three dimensionality primarily on the density of states keep doped diamond from having a T_c closer to that of MgB2.
We consider superconductivity in boron (B) doped diamond using a simplified model for the valence band of diamond. We treat the effects of substitutional disorder of B ions by the coherent potential approximation (CPA) and those of the attractive force between holes by the ladder approximation under the assumption of instantaneous interaction with the Debye cutoff. We thereby calculate the quasiparticle life time, the evolution of the single-particle spectra due to doping, and the effect of disorder on the superconducting critical temperature $T_c$. We in particular compare our results with those for supercell calculations to see the role of disorder, which turns out to be of crucial importance to $T_c$.
The discoveries of superconductivity in heavily boron-doped diamond (C:B) in 2004 and silicon (Si:B) in 2006 renew the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily-boron doped silicon carbide (SiC:B). The sample used for that study consists of cubic and hexagonal SiC phase fractions and hence this lead to the question which of them participates in the superconductivity. Here we focus on a sample which mainly consists of hexagonal SiC without any indication for the cubic modification by means of x-ray diffraction, resistivity, and ac susceptibility.
A phase slip is a localized disturbance in the coherence of a superconductor allowing an abrupt 2$pi$ phase shift. Phase slips are a ubiquitous feature of one-dimensional superconductors and also have an analogue in two-dimensions. Here we present electrical transport measurements on boron-doped nanocrystalline diamond (BNCD) microbridges where, despite their three-dimensional macroscopic geometry, we find clear evidence of phase slippage in both the resistance-temperature and voltage-current characteristics. We attribute this behavior to the unusual microstructure of BNCD. We argue that the columnar crystal structure of BNCD forms an intrinsic Josephson junction array that supports a line of phase slippage across the microbridge. The voltage-state in these bridges is metastable and we demonstrate the ability to switch deterministically between different superconducting states by applying electromagnetic noise pulses. This metastability is remarkably similar to that observed in $delta$-MoN nanowires, but with a vastly greater response voltage.
This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30,GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients and the grain boundary components undergo an irreversible phase change at 14,GPa. We show that the blue shift in the pressure-dependent vibrational modes correlates with the negative pressure coefficient of $T_{c}$ in BDD. The analysis of x-ray diffraction data determines the equation of state of the BDD film, revealing a high bulk modulus of $B_{0}$=510$pm$28,GPa. The comparative analysis of high-pressure data clarified that the sp$^{2}$ carbons in the grain boundaries transform into hexagonal diamond.
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