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Register a new userObservation of First-Order Metal-Insulator Transition without Structural Phase Transition in VO_2
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An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator VO_2 based two-terminal device. An abrupt current jump is measured at a critical electric field. The Raman-shift frequency and the bandwidth of the most predominant Raman-active A_g mode, excited by the electric field, do not change through the abrupt MIT, while, they, excited by temperature, pronouncedly soften and damp (structural MIT), respectively. This structural MIT is found to occur secondarily.
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CaFe$_2$As$_2$ has been synthesized and found to form in the tetragonal, ThCr$_2$Si$_2$ structure with lattice parameters $a = 3.912(68) AA$ and $c = 11.667(45) AA$. Upon cooling through 170 K, CaFe$_2$As$_2$ undergoes a first order, structural phase transition to a low temperature, orthorhombic phase with a $2 - 3$ K range of hysteresis and coexistence. This transition is clearly evident in microscopic, thermodynamic and transport measurements. CaFe$_2$As$_2$ is the third member of the AFe$_2$As$_2$ (A = Ba, Sr, Ca) family to exhibit such a dramatic phase transition and is a promising candidate for studies of doping induced superconductivity.
We present a study of the effect of very high pressure on the orthorhombic perovskite GdMnO3 by Raman spectroscopy and synchrotron x-ray diffraction up to 53.2 GPa. The experimental results yield a structural and insulator-to-metal phase transition close to 50 GPa, from an orthorhombic to a metrically cubic structure. The phase transition is of first order with a pressure hysteresis of about 6 GPa. The observed behavior under very high pressure might well be a general feature in rare-earth manganites.
The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement.
The charge transfer antiferromagnetic (T$_{N}$ =220 K) insulator EuNiO$_{3}$ undergoes, at ambient pressure, a temperature-induced metal insulator MI transition at T$_{MI}$=463 K. We have investigated the effect of pressure (up to p~20 GPa) on the electronic, magnetic and structural properties of EuNiO$_{3}$ using electrical resistance measurements, ${151}^$Eu nuclear resonance scattering of synchrotron radiation and x-ray diffraction, respectively. With increasing pressure we find at p$_{c}$ =5.8 GPa a transition from the insulating state to a metallic state, while the orthorhombic structure remains unchanged up to 20 GPa. The results are explained in terms of a gradual increase of the electronic bandwidth with increasing pressure, which results in a closing of the charge transfer gap. It is further shown that the pressure-induced metallic state exhibits magnetic order with a lowervalue of T$_{N}$ (T$_{N}$ ~120 K at 9.4 GPa) which disappears between 9.4 and 14.4 GPa.
Higher accuracy low temperature charge transport measurements in combination with precise X-ray diffraction experiment have allowed detecting the symmetry lowering in the single domain Tm0.19Yb0.81B12 crystals of the family of dodecaborides with metal-insulator transition. Basing on the fine structure analysis we discover formation of dynamic charge stripes within the semiconducting matrix of Tm0.19Yb0.81B12. The charge dynamics in these metallic nano-size conducting channels is characterized by broad-band optical spectroscopy that allowed estimating the frequency (~2.4 10^11 Hz) of quantum motion of the charge carriers. It is suggested that caused by cooperative Jahn-Teller effect in the boron sub-lattice, the large amplitude rattling modes of the Tm and Yb ions are responsible for modulation of the conduction band along [110] direction through the variation of 5d-2p hybridization of electron states.
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