No Arabic abstract
Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction. Spin-polarized current is perpendicular to the interfaces. One of the ferromagnetic layers has pinned spins and the other has free spins. The current breaks spin equilibrium in the free spin layer due to spin injection or extraction. The nonequilibrium spins interact with the lattice magnetic moment via the effective s-d exchange field, which is current dependent. Above a certain current density threshold, the interaction leads to a magnetization reversal. Two threshold currents are found, which are reached as the current increases or decreases, respectively, so that a current hysteresis takes place. The theoretical results are in accordance with the experiments on magnetization reversal by current in three-layer junctions Co/Cu/Co prepared in a pillar form.
Exchange-coupled structures consisting of ferromagnetic and ferrimagnetic layers become technologically more and more important. We show experimentally the occurrence of completely reversible, hysteresis-free minor loops of [Co(0.2 nm)/Ni(0.4 nm)/Pt(0.6 nm)]$_N$ multilayers exchange-coupled to a 20 nm thick ferrimagnetic Tb$_{28}$Co$_{14}$Fe$_{58}$ layer, acting as hard magnetic pinning layer. Furthermore, we present detailed theoretical investigations by means of micromagnetic simulations and most important a purely analytical derivation for the condition of the occurrence of full reversibility in magnetization reversal. Hysteresis-free loops always occur if a domain wall is formed during the reversal of the ferromagnetic layer and generates an intrinsic hard-axis bias field that overcomes the magnetic anisotropy field of the ferromagnetic layer. The derived condition further reveals that the magnetic anisotropy and the bulk exchange of both layers, as well as the exchange coupling strength and the thickness of the ferromagnetic layer play an important role for its reversibility.
A mesoscopic description of spin-transfer effect is proposed, based on the spin-injection mechanism occurring at the junction with a ferromagnet. The effect of spin-injection is to modify locally, in the ferromagnetic configuration space, the density of magnetic moments. The corresponding gradient leads to a current-dependent diffusion process of the magnetization. In order to describe this effect, the dynamics of the magnetization of a ferromagnetic single domain is reconsidered in the framework of the thermokinetic theory of mesoscopic systems. Assuming an Onsager cross-coefficient that couples the currents, it is shown that spin-dependent electric transport leads to a correction of the Landau-Lifshitz-Gilbert equation of the ferromagnetic order parameter with supplementary diffusion terms. The consequence of spin-injection in terms of activation process of the ferromagnet is deduced, and the expressions of the effective energy barrier and of the critical current are derived. Magnetic fluctuations are calculated: the correction to the fluctuations is similar to that predicted for the activation. These predictions are consistent with the measurements of spin-transfer obtained in the activation regime and for ferromagnetic resonance under spin-injection.
A new mathematical model of hysteresis loop has been derived. Model consists in an extansion of tanh($cdot$) by extanding the base of exp function into an arbitrary positive number. The presented model is self-similar and invariant with respect to scaling. Scaling of magnetic hysteresis loop has been done using the notion of homogenous function in general sense.
Spin-current injection into an organic semiconductor $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$ film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by ferromagnetic or spin-wave resonance, a voltage signal was found to appear in the $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$ film. Magnetic-field-angle dependence measurements indicate that the voltage signal is governed by the inverse spin Hall effect in $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$. We found that the voltage signal in the $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$/YIG system is critically suppressed around 80 K, around which magnetic and/or glass transitions occur, implying that the efficiency of the spin-current injection is suppressed by fluctuations which critically enhanced near the transitions.
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices.