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Spin-current injection into an organic semiconductor $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$ film induced by the spin pumping from an yttrium iron garnet (YIG) film. When magnetization dynamics in the YIG film is excited by ferromagnetic or spin-wave resonance, a voltage signal was found to appear in the $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$ film. Magnetic-field-angle dependence measurements indicate that the voltage signal is governed by the inverse spin Hall effect in $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$. We found that the voltage signal in the $rm{kappatext{-}(BEDTtext{-}TTF)_2Cu[N(CN)_2]Br}$/YIG system is critically suppressed around 80 K, around which magnetic and/or glass transitions occur, implying that the efficiency of the spin-current injection is suppressed by fluctuations which critically enhanced near the transitions.
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Ferromagnetic metal-organic semiconductor (FM-OSC) hybrid interfaces have shown to play an important role for spin injection in organic spintronics. Here, 11,11,12,12-tetracyanonaptho-2,6-quinodimethane (TNAP) is introduced as an interfacial layer in Co-OSCs heterojunction with an aim to tune the spin injection. The Co/TNAP interface is investigated by use of X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS), near edge X-ray absorption fine structure (NEXAFS) and X-ray magnetic circular dichroism (XMCD). Hybrid interface states (HIS) are observed at Co/TNAP interface resulting from chemical interaction between Co and TNAP. The energy level alignment at Co/TNAP/OSCs interface is also obtained, and a reduction of the hole injection barrier is demonstrated. XMCD results confirm sizeable spin polarization at the Co/TNAP hybrid interface.
An electron is usually considered to have only one type of kinetic energy, but could it have more, for its spin and charge, or by exciting other electrons? In one dimension (1D), the physics of interacting electrons is captured well at low energies by the Tomonaga-Luttinger-Liquid (TLL) model, yet little has been observed experimentally beyond this linear regime. Here, we report on measurements of many-body modes in 1D gated-wires using a tunnelling spectroscopy technique. We observe two separate Fermi seas at high energies, associated with spin and charge excitations, together with the emergence of three additional 1D replica modes that strengthen with decreasing wire length. The effective interaction strength in the wires is varied by changing the amount of 1D inter-subband screening by over 45%. Our findings demonstrate the existence of spin-charge separation in the whole energy band outside the low-energy limit of validity of the TLL model, and also set a limit on the validity of the newer nonlinear TLL theory.
Magnetic junction is considered which consists of two ferromagnetic metal layers, a thin nonmagnetic spacer in between, and nonmagnetic lead. Theory is developed of a magnetization reversal due to spin injection in the junction. Spin-polarized current is perpendicular to the interfaces. One of the ferromagnetic layers has pinned spins and the other has free spins. The current breaks spin equilibrium in the free spin layer due to spin injection or extraction. The nonequilibrium spins interact with the lattice magnetic moment via the effective s-d exchange field, which is current dependent. Above a certain current density threshold, the interaction leads to a magnetization reversal. Two threshold currents are found, which are reached as the current increases or decreases, respectively, so that a current hysteresis takes place. The theoretical results are in accordance with the experiments on magnetization reversal by current in three-layer junctions Co/Cu/Co prepared in a pillar form.
Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.
We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle measurements. We observe significant spin accumulation in the Ge up to room temperature. We observe precessional dephasing of the spin accumulation (the Hanle effect) in an applied magnetic field for both forward and reverse bias (spin extraction and injection), and determine spin lifetimes and corresponding diffusion lengths for temperatures of 225 K to 300 K. The room temperature spin lifetime increases from {tau}s = 50 ps to 123 ps with decreasing electron concentration, as expected from electron spin resonance work on bulk Ge. The measured spin resistance-area product is in good agreement with values predicted by theory for samples with carrier densities below the metal-insulator transition (MIT), but 100x larger for samples above the MIT. These data demonstrate that the spin accumulation measured occurs in the Ge, although dopant-derived interface or band states may enhance the measured spin voltage above the MIT. We estimate the polarization in the Ge to be on the order of 1%.
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