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Positional disorder of Ba in the thermoelectric germanium clathrate Ba6Ge25

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 Added by Valeri Petkov
 Publication date 2003
  fields Physics
and research's language is English




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The local structure of Ba6Ge25 has been studied by x-ray diffraction and the atomic pair distribution function technique at 40 K and room temperature. Unambiguous evidence has been found that two out of three types of Ba atoms in Ba6Ge25 move off their positions and become locked in split sites at low temperatures.

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178 - E. Welchman , P. Giannozzi , 2014
We solve a long-standing experimental discrepancy of NH$_3$BH$_3$, which---as a molecule---has a threefold rotational axis, but in its crystallized form at room temperature shows a fourfold symmetry about the same axis, creating a geometric incompatibility. To explain this peculiar experimental result, we study the dynamics of this system with ab initio Car-Parrinello molecular dynamics and nudged-elastic-band simulations. We find that rotations, rather than spatial static disorder, at angular velocities of 2 rev/ps---a time scale too small to be resolved by standard experimental techniques---are responsible for the fourfold symmetry.
In the ternary system Sr-Cu-Ge, a clathrate type-I phase, Sr8Cu5.3Ge40.7 (a = 1.06311(3), exists close to the Zintl limit in a small temperature interval. Sr8Cu5.3Ge40.7 decomposes eutectoidally on cooling at 730{deg}C into (Ge), SrGe2 and tau1-SrCu2-xGe2+x. Phase equilibria at 700{deg}C have been established for the Ge rich part and are characterized by the appearance of only one ternary compound, tau1-SrCu2-xGe2+x, which crystallizes with the ThCr2Si2 structure type and forms a homogeneity range up to x=0.4 (a = 0.42850(4), c = 1.0370(1) nm). Additionally, the extent of the clathrate type-I solid solution Ba8-xSrxCuyGe46-y (5.2 < y < 5.4) has been studied at various temperatures. The clathrate type-I crystal structure (space group ) has been proven by X-ray single crystal diffraction on two single crystals with composition Sr8Cu5.3Ge40.7 (a = 1.06368(2) nm) and Ba4.9Sr3.1Cu5.3Ge40.7 (a = 1.06748(2) nm) measured at 300, 200 and 100 K. From the temperature dependency of the lattice parameters and the atomic displacement parameters, the thermal expansion coefficients, the Debye- and Einstein-temperatures and the speed of sound have been determined. From heat capacity measurements of Sr8Cu5.3Ge40.7 at low temperatures, the Sommerfeld coefficient and the Debye temperature have been extracted, whereas from a detailed analysis of these data at higher temperatures, Einstein branches of the phonon dispersion relation have been derived and compared with those obtained from the atomic displacement parameters. Electrical resistivity measurements of Sr8Cu5.3Ge40.7 reveal a rather metallic behaviour in the low temperature range (< 300 K).
As-Based Zintl compounds Ba1-xKxCd2As2 crystallized in the CaAl2Si2-type structure (space group P3-m1) were prepared using solid-state reactions followed by hot-pressing. We have successfully substituted K for Ba up to x = 0.08, producing hole-carrier doping with concentrations up to 1.60*1020 cm-3. We have determined the band-gap value of non-doped BaCd2As2 to be 0.40 eV from the temperature dependence of the electrical resistivity. Both the electrical resistivity and the Seebeck coefficient decrease with hole doping, leading to a power factor value of 1.28 mW m-1 K-2 at 762 K for x = 0.04. A first-principles band calculation shows that the relatively large power factor mainly originates from the two-fold degeneracy of the bands comprising As px,y orbitals and from the anisotropic band structure at the valence-band maximum. The lattice thermal conductivity is suppressed by the K doping to 0.46 W m-1 K-1 at 773 K for x = 0.08, presumably due to randomness. The effect of randomness is compensated by an increase in the electronic thermal conductivity, which keeps the total thermal conductivity approximately constant. In consequence, the dimensionless figure-of-merit ZT reaches a maximum value of 0.81 at 762 K for x = 0.04.
The optical conductivity spectra of the rattling phonons in the clathrate Ba$_8$Ga$_{16}$Ge$_{30}$ are investigated in detail by use of the terahertz time-domain spectroscopy. The experiment has revealed that the lowest-lying vibrational mode of a Ba(2)$^{2+}$ ion consists of a sharp Lorentzian peak at 1.2 THz superimposed on a broad tail weighted in the lower frequency regime around 1.0 THz. With decreasing temperature, an unexpected linewidth broadening of the phonon peak is observed, together with monotonic softening of the phonon peak and the enhancement of the tail structure. These observed anomalies are discussed in terms of impurity scattering effects on the hybridized phonon system of rattling and acoustic phonons.
405 - K. Iwamoto , T. Mori , S. Kajitani 2013
We have investigated optical conductivity spectra of $n$- and $p$-type Ba$_8$Ga $_{16}$Sn$_{30}$ ($alpha$-BGS) with type-VIII clathrate structure, at temperatures from 296,K down to 6,K with a terahertz time-domain spectrometer (0.2,-,2.5,THz). The continuous spectra contributed from charge carriers are dispersive in this frequency range and also temperature- and carrier type-dependent. The Drude-Smith model taking multiple-scatterings of charge carriers into account well reproduces those data. The relaxation rate of the $n$-type carriers decreases more sharply than that in the $p$-type material, suggesting that a stronger electron-phonon interaction may exist in the $n$-type than in the $p$-type. On the other hand, the localized infrared-active modes observed at 1.3,THz and 1.7,THz, identified as the rattling phonons of the Ba$^{2+}$ ions quasi-on-center vibrations, become soft and broad significantly with decreasing temperature as well as observed in type-I BGS and BGG (Ba$_8$Ga$_{16}$Ge$_{30}$) clathrates. The softening in the $n$-type is smaller by about 30% than in the $p$-type, whereas the linewidth brodening is almost the same independently on the carrier type. The difference in the softening is discussed with a scenario where the interaction of rattling phonons with carriers can modify the anharmonic potential of the guest ions. The anomalous broadening at low temepratures is also discussed by the impurity-scattering model presented for a rattling-phonon system strongly hybridized with acoustic cage phonons.
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