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Register a new userThickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition
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Added by
Alexej Pogrebnyakov
Publication date
2003
fields
Physics
and research's language is
English
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We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.
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A Hybrid Physical-Chemical Vapour Deposition (HPCVD) system consisting of separately controlled Mg-source heater and substrate heater is used to grow MgB2 thin films and thick films at various temperatures. We are able to grow superconducting MgB2 thin films at temperatures as low as 350 C with a Tc0 of 35.5 K. MgB2 films up to 4 um in thickness grown at 550 C have Jc over 10E6 A/cm2 at 5 K and zero applied field. The low deposition temperature of MgB2 films is desirable for all-MgB2 tunnel junctions and MgB2 thick films are important for applications in coated conductors.
We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-ray diffraction and cross-sectional TEM reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate and a 30 degree rotation in the ab-plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2(parallel to the film) / Hc2(pendicular to the film), about 3 at 25K. The critical current densities at 4.2 K and 20 K (at 1 T perpendicular magnetic field) are 5x10E6 A/cm2 and 1x10E6 A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications.
We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon doping. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical field increases dramatically as compared to the clean films. The self-field Jc in the carbon-doped films is lower than that in the clean films, but Jc remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon doping approach can be used to produce MgB2 materials for high magnetic field applications.
We report high room-temperature mobility in single layer graphene grown by Chemical Vapor Deposition (CVD) after wet transfer on SiO$_2$ and hexagonal boron nitride (hBN) encapsulation. By removing contaminations trapped at the interfaces between single-crystal graphene and hBN, we achieve mobilities up to$sim70000cm^2 V^{-1} s^{-1}$ at room temperature and$sim120000cm^2 V^{-1} s^{-1}$ at 9K. These are over twice those of previous wet transferred graphene and comparable to samples prepared by dry transfer. We also investigate the combined approach of thermal annealing and encapsulation in polycrystalline graphene, achieving room temperature mobilities$sim30000 cm^2 V^{-1} s^{-1}$. These results show that, with appropriate encapsulation and cleaning, room temperature mobilities well above $10000cm^2 V^{-1} s^{-1}$ can be obtained in samples grown by CVD and transferred using a conventional, easily scalable PMMA-based wet approach.
Structural and superconducting properties of magnesium diboride thin films grown by pulsed laser deposition on zirconium diboride buffer layers were studied. We demonstrate that the ZrB2 layer is compatible with the MgB2 two step deposition process. Synchrotron radiation measurements, in particular anomalous diffraction measurements, allowed to separate MgB2 peaks from ZrB2 ones and revealed that both layers have a single in plane orientation with a sharp interface between them. Moreover, the buffer layer avoids oxygen contamination from the sapphire substrate. The critical temperature of this film is near 37.6 K and the upper critical field measured at Grenoble High Magnetic Field Laboratory up to 20.3 T is comparable with the highest ones reported in literature.
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