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Register a new userNonlinear spin-polarized transport through a ferromagnetic domain wall
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A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as functions of wall width and temperature. As the width increases or the temperature decreases, direct tunneling between the majority spin bands decreases the effectiveness of the diode. This has important implications for the zero-field quenched resistance of magnetic semiconductors and for the design of a recently proposed spin transistor.
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We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As the strength of the domain wall magnetization is increased, negative magnetoresistance is also observed.
Carbon nanotubes (CNT) belong to the most promising new materials which can in the near future revolutionize the conventional electronics. When sandwiched between ferromagnetic electrodes, the CNT behaves like a spacer in conventional spin-valves, leading quite often to a considerable giant magneto-resistance effect (GMR). This paper is devoted to reviewing some topics related to electron correlations in CNT. The main attention however is directed to the following effects essential for electron transport through nanotubes: (i) nanotube/electrode coupling and (ii) inter-tube interactions.It is shown that these effects may account for some recent experimental reports on GMR, including those on negative (inverse) GMR.
A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have been reported only in non-magnetic Dirac systems. In this work we propose a realization of topologically protected spin-polarized flat bands generated by domain walls in planar magnetic topological insulators. Using first-principles material design we suggest a family of intrinsic antiferromagnetic topological insulators with an in-plane sublattice magnetization and a high Neel temperature. Such systems can host domain walls in a natural manner. For these materials, we demonstrate the existence of spin-polarized flat bands in the vicinity of the Fermi level and discuss their properties and potential applications.
We demonstrate optical manipulation of the position of a domain wall in a dilute magnetic semiconductor, GaMnAsP. Two main contributions are identified. Firstly, photocarrier spin exerts a spin transfer torque on the magnetization via the exchange interaction. The direction of the domain wall motion can be controlled using the helicity of the laser. Secondly, the domain wall is attracted to the hot-spot generated by the focused laser. Unlike magnetic field driven domain wall depinning, these mechanisms directly drive domain wall motion, providing an optical tweezer like ability to position and locally probe domain walls.
We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall. We show that increasing the voltage reduces the spin-flip rate, and is therefore equivalent to reducing the width of the domain wall. As an application, we show that this effect widens the temperature window in which the operation of a unipolar spin diode is nearly ideal.
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