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Register a new userUltrathin epitaxial ferroelectric films grown on compressive substrates: Competition between the surface and strain effects
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The mean-field Landau-type theory is used to analyze the polarization properties of epitaxial ferroelectric thin films grown on dissimilar cubic substrates, which induce biaxial compressive stress in the film plane. The intrinsic effect of the film surfaces on the spontaneous polarization is taken into account via the concept of the extrapolation length. The theory simultaneously allows for the influence of the misfit strain imposed on the film lattice by a thick substrate. Numerical calculations are performed for PbTiO3 and BaTiO3 films under an assumption of the polarization reduction in surface layers. The film mean polarization is calculated as a function of film thickness, temperature, and misfit strain. It is shown that the negative intrinsic size effect is reduced in epitaxial films due to the in-plane compression of the film lattice. At room temperature, strong reduction of the mean polarization may take place only in ultrathin films (thickness ~ 1 nm). Theoretical predictions are compared with the available experimental data on polarization properties of BaTiO3 films grown on SrRuO3 coated SrTiO3.
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Domain structures of 320 nm thin epitaxial films of ferroelectric PbTiO3 grown by MOCVD technique in identical conditions on SmScO3 and TbScO3 perovskite sub- strates have been investigated by Raman spectroscopy and piezoresponse force microscopy techniques. Phonon frequency shifts and typical domain structure motifs are discussed. The results reveal strikingly different domain structure architecture: domain structures of the PbTiO3 film grown on SmScO3 have dominantly a-domain orientation while strongly preferential c-domain orientation was found in the PbTiO3 film grown on the TbScO3 substrate. Differences between the two cases are traced back to the film-substrate lattice mismatch at the deposition temperature.
Recently, hexagonal boron nitride (hBN) layers have generated a lot of interest as ideal substrates for 2D stacked devices. Sapphire-supported thin hBN films of different thicknesses are grown using metalorganic vapour phase epitaxy technique by following a flow modulation scheme. Though these films of relatively large size are potential candidates to be employed in designing real devices, they exhibit wrinkling. The formation of wrinkles is a key signature of strain distribution in a film. Raman imaging has been utilized to study the residual strain distribution in these wrinkled hBN films. An increase in the overall compressive strain in the films with an increase in the layer thickness has been observed. To find whether the residual lattice strain in the films can be removed by a thermal treatment, temperature dependent Raman measurements of these films are carried out. The study demonstrates that the thermal rate of strain evolution is higher in the films of lower thickness than in the thicker films. This observation further provides a possible explanation for the variation of strain in the as-grown films. An empirical relation has been proposed for estimating the residual strain from the morphology of the films. We have also shown that the residual strain can be partially released by the delamination of the films.
The discovery of stable room temperature ferroelectricity in Croconic Acid, an organic ferroelectric material, with polarization values on par with those found in inorganic ferroelectric materials and highest among organic ferroelectric materials, has opened up possibilities to realize myriads of nano-electronic and spintronic devices based on organic ferroelectrics. Such possibilities require an adequate understanding of the ferroelectric properties of Croconic Acid grown on surfaces that are commonly employed in device fabrication. While several macroscopic studies on relatively larger crystals of Croconic Acid have been performed, studies on thin films are only in their early stages. We have grown thin films of Croconic Acid on gold and cobalt surfaces, which are commonly used in spintronic devices as metallic electrodes, and studied the ferroelectric response of the films using ex-situ Piezoresponse Force Microscopy at room temperature. We show that the polarization reversal in Croconic Acid domains is sensitive to the substrate surface. Using the same experimental protocol, we observe the robust polarization reversal of a single, mostly in-plane electrical domain for a cobalt substrate, whereas polarization reversal is hardly observed for a gold substrate. We attribute this difference to the influence of substrates on the Croconic Acid molecular networks. Our study suggests that to realize devices one has to take care about the substrate on which Croconic Acid will be deposited. The fact that polarization switching is robust on cobalt surface can be used to fabricate multifunctional devices that utilize the cobalt-Croconic Acid interface.
Ferroelectric BaTiO3 films with large polarization have been integrated with Si(001) by pulsed laser deposition. High quality c-oriented epitaxial films are obtained in a substrate temperature range of about 300 deg C wide. The deposition temperature critically affects the growth kinetics and thermodynamics balance, resulting on a high impact in the strain of the BaTiO3 polar axis, which can exceed 2% in films thicker than 100 nm. The ferroelectric polarization scales with the strain and therefore deposition temperature can be used as an efficient tool to tailor ferroelectric polarization. The developed strategy overcomes the main limitations of the conventional strain engineering methodologies based on substrate selection: it can be applied to films on specific substrates including Si(001) and perovskites, and it is not restricted to ultrathin films.
Co2FeAl (CFA) thin films with thickness varying from 10 nm to 115 nm have been deposited on MgO(001) substrates by magnetron sputtering and then capped by Ta or Cr layer. X-rays diffraction (XRD) revealed that the cubic $[001]$ CFA axis is normal to the substrate and that all the CFA films exhibit full epitaxial growth. The chemical order varies from the $B2$ phase to the $A2$ phase when decreasing the thickness. Magneto-optical Kerr effect (MOKE) and vibrating sample magnetometer measurements show that, depending on the field orientation, one or two-step switchings occur. Moreover, the films present a quadratic MOKE signal increasing with the CFA thickness, due to the increasing chemical order. Ferromagnetic resonance, MOKE transverse bias initial inverse susceptibility and torque (TBIIST) measurements reveal that the in-plane anisotropy results from the superposition of a uniaxial and of a fourfold symmetry term. The fourfold anisotropy is in accord with the crystal structure of the samples and is correlated to the biaxial strain and to the chemical order present in the films. In addition, a large negative perpendicular uniaxial anisotropy is observed. Frequency and angular dependences of the FMR linewidth show two magnon scattering and mosaicity contributions, which depend on the CFA thickness. A Gilbert damping coefficient as low as 0.0011 is found.
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