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Register a new userTheory of shot noise in space-charge limited diffusive conduction regime
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As is well known, the fluctuations from a stable stationary nonequilibrium state are described by a linearized nonhomogeneous Boltzmann-Langevin equation. The stationary state itself may be described by a nonlinear Boltzmann equation. The ways of its linearization sometimes seem to be not unique. We argue that there is actually a unique way to obtain a linear equation for the fluctuations. In the present paper we treat as an example an analytical theory of nonequilibrium shot noise in a diffusive conductor under the space charge limited regime. Our approach is compared with that of Schomerus, Mishchenko and Beenakker [Phys. Rev. B 60, 5839 (1999)]. We find some difference between the present theory and the approach of their paper and discuss a possible origin of the difference. We believe that it is related to the fundamentals of the theory of fluctuation phenomena in a nonequilibrium electron gas.
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We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current (SCLC) effect. The onset of the effect clearly correlates with the NW width. For narrow NWs the mature SCLC regime was achieved. This effect has great impact on fluctuation characteristics of studied NWs. At low voltages, we found that the normalized noise level increases with decreasing NW width. In the SCLC regime, a further increase in the normalized noise intensity (up to 1E4 times) was observed, as well as a change in the shape of the spectra with a tendency towards slope -3/2. We suggest that the features of the electric current and noise found in the NWs are of a general character and will have an impact on the development of NW-based devices.
We have operated a quantum point contact (QPC) charge detector in a radio frequency (RF) mode that allows fast charge detection in a bandwidth of tens of megahertz. We find that the charge sensitivity of the RF-QPC is limited not by the noise of a secondary amplifier, but by non-equilibrium noise f the QPC itself. We have performed frequency-resolved measurements of the noise within a 10 MHz bandwidth around our carrier wave. When averaged over our bandwidth, we find that the noise is in good agreement with the theory of photon-assisted shot noise. Our measurements also reveal strong frequency dependence of the noise, asymmetry with respect to the carrier wave, the appearance of sharp local maxima that are correlated with mechanical degrees of freedom in the sample, and noise suppression indicative of many-body physics near the 0.7 structure.
We have observed shot noise in the hopping conduction of two dimensional carriers confined in a p-type SiGe quantum well at a temperature of 4K. Moreover, shot noise is suppressed relative to its ``classical value 2eI by an amount that depends on the length of the sample and carrier density, which was controlled by a gate voltage. We have found a suppression factor to the classical value of about one half for a 2 $mu$m long sample, and of one fifth for a 5 $mu$m sample. In each case, the factor decreased slightly as the density increased toward the insulator-metal transition. We explain these results in terms of the characteristic length ($simeq 1mu$m in our case) of the inherent inhomogeneity of hopping transport.
We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hopping (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian value is measured. This suggests an observation of a finite-size effect in shot noise in the VRH conduction and demonstrates a possibility of accurate quasiparticle charge measurements in the insulating regime.
Ethyl-hexyl substituted polyfluorene (PF) with its high level of molecular disorder can be described very well by one-carrier space-charge-limited conduction for a discrete set of trap levels with energy $sim$ 0.5 eV above the valence band edge. Sweeping the bias above the trap-filling limit in the as-is polymer generates a new set of exponential traps, which is clearly seen in the density of states calculations. The trapped charges in the new set of traps have very long lifetimes and can be detrapped by photoexcitation. Thermal cycling the PF film to a crystalline phase prevents creation of additional traps at higher voltages.
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