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Register a new userElectric Current and Noise in Long GaN Nanowires in the Space-Charge Limited Transport Regime
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We studied electric current and noise in planar GaN nanowires (NWs). The results obtained at low voltages provide us with estimates of the depletion effects in the NWs. For larger voltages, we observed the space-charge limited current (SCLC) effect. The onset of the effect clearly correlates with the NW width. For narrow NWs the mature SCLC regime was achieved. This effect has great impact on fluctuation characteristics of studied NWs. At low voltages, we found that the normalized noise level increases with decreasing NW width. In the SCLC regime, a further increase in the normalized noise intensity (up to 1E4 times) was observed, as well as a change in the shape of the spectra with a tendency towards slope -3/2. We suggest that the features of the electric current and noise found in the NWs are of a general character and will have an impact on the development of NW-based devices.
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As is well known, the fluctuations from a stable stationary nonequilibrium state are described by a linearized nonhomogeneous Boltzmann-Langevin equation. The stationary state itself may be described by a nonlinear Boltzmann equation. The ways of its linearization sometimes seem to be not unique. We argue that there is actually a unique way to obtain a linear equation for the fluctuations. In the present paper we treat as an example an analytical theory of nonequilibrium shot noise in a diffusive conductor under the space charge limited regime. Our approach is compared with that of Schomerus, Mishchenko and Beenakker [Phys. Rev. B 60, 5839 (1999)]. We find some difference between the present theory and the approach of their paper and discuss a possible origin of the difference. We believe that it is related to the fundamentals of the theory of fluctuation phenomena in a nonequilibrium electron gas.
The thermoelectric efficiency of semiconductors is usually considered in the ohmic electronic transport regime, which is achieved through high doping. Here we consider the opposite regime of low doping where the current-voltage characteristics are nonlinear and dominated by space-charge-limited transport. We show that in this regime, the thermoelectric efficiency can be described by a single figure of merit, in analogy with the ohmic case. Efficiencies for bulk, thin film, and nanowire materials are discussed, and it is proposed that nanowires are the most promising to take advantage of space-charge-limited transport for thermoelectrics.
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross-section, which creates a doublet peak in the piezoelectric induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces as well as an interaction with the opposing polarization fields at two semi-polar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on configuration of the multi-layer structure, and is not amenable to an analytical model.
Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy bands in a semiconductor. If applying a voltage (electric field) transfers electrons from an energy sub band of a low effective mass to a second one with higher effective mass, then the current drops. This manifests itself as a negative slope or NDR in the I-V characteristics of the device which is in essence due to the reduction of electron mobility. Recalling that mobility is inversely proportional to electron effective mass or curvature of the energy sub band. This effect was observed in semiconductors like GaAs which has direct bandgap of very low effective mass and its second indirect sub band is about 300 meV above the former. More importantly a self-repeating oscillation of spatially accumulated charge carriers along the transport direction occurs which is the artifact of NDR, a process which is called Gunn oscillation and was observed by J. B. Gunn. In sharp contrast to GaAs, bulk silicon has a very high energy spacing (~1 eV) which renders the initiation of transfer-induced NDR unobservable. Using Density Functional Theory (DFT), semi-empirical 10 orbital ($sp^{3}d^{5}s^{*}$) Tight Binding (TB) method and Ensemble Monte Carlo (EMC) simulations we show for the first time that (a) Gunn Effect can be induced in narrow silicon nanowires with diameters of 3.1 nm under 3 % tensile strain and an electric field of 5000 V/cm, (b) the onset of NDR in I-V characteristics is reversibly adjustable by strain and (c) strain can modulate the value of resistivity by a factor 2.3 for SiNWs of normal I-V characteristics i.e. those without NDR. These observations are promising for applications of SiNWs in electromechanical sensors and adjustable microwave oscillators.
We demonstrate that nuclear spin fluctuations lead to the electric current noise in the mesoscopic samples of organic semiconductors showing the pronounced magnetoresistance in weak fields. For the bipolaron and electron-hole mechanisms of organic magnetoresistance, the current noise spectrum consists of the high frequency peak related to the nuclear spin precession in the Knight field of the charge carriers and the low frequency peak related to the nuclear spin relaxation. The shape of the spectrum depends on the external magnetic and radiofrequency fields, which allows one to prove the role of nuclei in magnetoresistance experimentally.
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