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Register a new userUltrafast terahertz probes of interacting dark excitons in chirality-specific semiconducting single-walled carbon nanotubes
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Ultrafast terahertz spectroscopy accesses the {em dark} excitonic ground state in resonantly-excited (6,5) SWNTs via internal, direct dipole-allowed transitions between lowest lying dark-bright pair state $sim$6 meV. An analytical model reproduces the response which enables quantitative analysis of transient densities of dark excitons and {em e-h} plasma, oscillator strength, transition energy renormalization and dynamics. %excitation-induced renormalization. Non-equilibrium, yet stable, quasi-1D quantum states with dark excitonic correlations rapidly emerge even with increasing off-resonance photoexcitation and experience a unique crossover to complex phase-space filling of %a complex distribution between both dark and bright pair states, different from dense 2D/3D excitons influenced by the thermalization, cooling and ionization to free carriers.
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We present results of wavelength-dependent ultrafast pump-probe experiments on micelle-suspended single-walled carbon nanotubes. The linear absorption and photoluminescence spectra of the samples show a number of chirality-dependent peaks, and consequently, the pump-probe results sensitively depend on the wavelength. In the wavelength range corresponding to the second van Hove singularities (VHSs), we observe sub-picosecond decays, as has been seen in previous pump-probe studies. We ascribe these ultrafast decays to intraband carrier relaxation. On the other hand, in the wavelength range corresponding to the first VHSs, we observe two distinct regimes in ultrafast carrier relaxation: fast (0.3-1.2 ps) and slow (5-20 ps). The slow component, which has not been observed previously, is resonantly enhanced whenever the pump photon energy resonates with an interband absorption peak, and we attribute it to radiative carrier recombination. Finally, the slow component is dependent on the pH of the solution, which suggests an important role played by H$^+$ ions surrounding the nanotubes.
We report a femtosecond mid-infrared study of the broadband low-energy response of individually separated (6,5) and (7,5) single-walled carbon nanotubes. Strong photoinduced absorption is observed around 200 meV, whose transition energy, oscillator strength, resonant chirality enhancement and dynamics manifest the observation of quasi-1D intra-excitonic transitions. A model of the nanotube 1s-2p cross section agrees well with the signal amplitudes. Our study further reveals saturation of the photoinduced absorption with increasing phase-space filling of the correlated e-h pairs.
We show that new low-energy photoluminescence (PL) bands can be created in semiconducting single-walled carbon nanotubes by intense pulsed excitation. The new bands are attributed to PL from different nominally dark excitons that are brightened due to defect-induced mixing of states with different parity and/or spin. Time-resolved PL studies on single nanotubes reveal a significant reduction of the bright exciton lifetime upon brightening of the dark excitons. The lowest energy dark state has longer lifetimes and is not in thermal equilibrium with the bright state.
Wavelength-dependent pump-probe spectroscopy of micelle-suspended single-walled carbon nanotubes reveals two-component dynamics. The slow component (5-20 ps), which has not been observed previously, is resonantly enhanced whenever the pump photon energy coincides with an absorption peak and we attribute it to interband carrier recombination, whereas we interpret the always-present fast component (0.3-1.2 ps) as intraband carrier relaxation in non-resonantly excited nanotubes. The slow component decreases drastically with decreasing pH (or increasing H$^+$ doping), especially in large-diameter tubes. This can be explained as a consequence of the disappearance of absorption peaks at high doping due to the entrance of the Fermi energy into the valence band, i.e., a 1-D manifestation of the Burstein-Moss effect.
We report a measurement on quantum capacitance of individual semiconducting and small band gap SWNTs. The observed quantum capacitance is remarkably smaller than that originating from density of states and it implies a strong electron correlation in SWNTs.
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