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Register a new userReply to the Comment of Chudnovski and Garanin on Phonon assisted Tunneling in Mn_{12} (PRL 83, 416 (1999))
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We reply to the comment of Chudnovsky and Garanin on the tunneling rate in Mn_{12}.
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Reply to the Comment of J.J. Alonso and J.F. Fernandez on the paper Hole-digging in ensembles of tunneling molecular magnets of I.S. Tupitsyn, P.C.E. Stamp and N.V. Prokofev (Phys. Rev. B 69, 132406, (2004)).
Based on the dielectric continuum model, we calculated the phonon assisted tunneling (PAT) current of general double barrier resonant tunneling structures (DBRTSs) including both symmetric and antisymmetric ones. The results indicate that the four higher frequency interface phonon modes (especially the one which peaks at either interface of the emitter barrier) dominate the PAT processes, which increase the valley current and decrease the PVR of the DBRTSs. We show that an asymmetric structure can lead to improved performance.
In this note, we reply to the comment made by E.I.Kats and V.V.Lebedev [arXiv:1407.4298] on our recent work Thermodynamics of quantum crystalline membranes [Phys. Rev. B 89, 224307 (2014)]. Kats and Lebedev question the validity of the calculation presented in our work, in particular on the use of a Debye momentum as a ultra-violet regulator for the theory. We address and counter argue the criticisms made by Kats and Lebedev to our work.
Two approximations used by Sengupta [Phys. Rev. B {bf 100}, 075429 (2019)] in numerically computing the adsorption rate of cold hydrogen atoms on suspended graphene are critically examined. The independent boson model approximation (IBMA) was used to compute the atom self-energy, and the single-pole approximation (SPA) was used to obtain the adsorption rate from the self-energy. It is shown explicitly that there are additional contributions to the self-energy appearing at the same order of the atom-phonon coupling as the IBMA terms that alter the value of the real part of the self-energy at low energies by several orders of magnitude in the regime of interest. This shift in the self-energy consequently renders the use of SPA invalid.
Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Greens functions method with the account of electron-phonon scattering. For MOSFETs, ambipolar conduction is explained via phonon-assisted band-to-band (Landau-Zener) tunneling. In comparison to the ballistic case, we show that the phonon scattering shifts the onset of ambipolar conduction to more positive gate voltage (thereby increasing the off current). It is found that the subthreshold swing in ambipolar conduction can be made as steep as 40mV/decade despite the effect of phonon scattering.
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